对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
IRFW644A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW610A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
AD | IRFR9310PBF | Arrow | Trans MOSFET P-CH Si 400V 1.8A 3-Pin(2+Tab) DPAK | |||||
IRFW840A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW624B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.1A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW840B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | |||||
IRFW640B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW634B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW630A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW740BTM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | |||||
IRFW720B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | |||||
IRFW710BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | - | |||||
IRFW530ATM_NL | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
IRFW640BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
IRFW614B | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.8A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW520A | Samsung Semiconductor | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFWZ14ATM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
IRFW634A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFWZ44 | Samsung Semiconductor | Power Field-Effect Transistor, 35A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | - | |||||
IRFW44A | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
IRFW34A | Samsung Semiconductor | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - |