对比 | 型号 | 厂商 | 描述 | 生命周期 | 风险等级 | ||
---|---|---|---|---|---|---|---|
JAN2N3019 | 小信号双极晶体管 | Microchip Technology Inc | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5 | Active | 高 设计 产品 长期 |
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FGY120T65SPD-F085 | Onsemi | IGBT/MOSFET驱动器,FGY120T65 - IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode | |
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JAN2N3019 | 小信号双极晶体管 | National Semiconductor Corporation | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39 | Obsolete | 高 设计 产品 长期 |
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JAN2N3019 | Microsemi Corporation | - | - | N/A 暂无风险等级信息 |
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JAN2N3019 | 小信号双极晶体管 | Motorola Semiconductor Products | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Obsolete | 高 设计 产品 长期 |
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JAN2N3019 | Fairchild Semiconductor Corporation | - | - | N/A 暂无风险等级信息 |
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JAN2N3019 | Teledyne Defense Electronics | - | - | N/A 暂无风险等级信息 |
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JAN2N3019 | 小信号双极晶体管 | Microsemi FPGA & SoC | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Transferred | 高 设计 产品 长期 |