对比 | 型号 | 厂商 | 描述 | 生命周期 | 风险等级 | ||
---|---|---|---|---|---|---|---|
2N2905 | 小信号双极晶体管 | Suzhou Good-Ark Electronics Co Ltd | Small Signal Bipolar Transistor, | Active | 高 设计 产品 长期 |
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PMCM6501VPEZ | Nexperia | MOSFET/FET,Nexperia PMCM6501VPE - Small Signal Field-Effect Transistor | |
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2N2905 | onsemi | - | - | N/A 暂无风险等级信息 |
|||
2N2905 | 小信号双极晶体管 | Microchip Technology Inc | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD | Active | 高 设计 产品 长期 |
||
2N2905 | MULTICOMP PRO | - | - | N/A 暂无风险等级信息 |
|||
2N2905 | New Jersey Semiconductor Products, Inc. | - | - | N/A 暂无风险等级信息 |
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2N2905 | 其他晶体管 | Fairchild Semiconductor Corporation | Transistor, | Obsolete | 高 设计 产品 长期 |
||
2N2905 | 其他晶体管 | Philips Semiconductors | Transistor, | Transferred | 高 设计 产品 长期 |
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2N2905 | 小信号双极晶体管 | Motorola Semiconductor Products | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39 | Obsolete | 高 设计 产品 长期 |
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2N2905 | Raytheon | - | - | N/A 暂无风险等级信息 |
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2N2905 | 射频小信号双极晶体管 | Solid State Devices Inc (SSDI) | RF Small Signal Bipolar Transistor, 0.6A I(C), 1-Element, Silicon, PNP, TO-39, TO-39, 3 PIN | Active | 高 设计 产品 长期 |