ST1

Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB

Trans Voltage Suppressor Diode, 91V V(RWM), Unidirectional,

Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.022uF, Surface Mount, 1206, CHIP, HALOGEN FREE AND ROHS COMPLIANT

VCXO, Clock, 1.5MHz Min, 100MHz Max, 28.6363MHz Nom,

Silicon Controlled Rectifier, 306A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-209AB

Ceramic Capacitor, Ceramic,

Ceramic Capacitor, Ceramic,

Ceramic Capacitor, Ceramic,

Ceramic Capacitor, Ceramic,

Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, 15% TC, 0.00056uF, Surface Mount, 1206, CHIP, HALOGEN FREE AND ROHS COMPLIANT

High Power SCRs;200A;1600V;TO-93,TO-209AB

High Power SCRs;200A;400V;TO-93,TO-209AB

High Power SCRs;200A;1200V;TO-93,TO-209AB

High Power SCRs;200A;2000V;TO-93,TO-209AB

Bipolar Transistors;NPN;12A;750V;TO-3P(H)IS

Device Marking:FS, IC (mA):150, VCEO (V):50, hFE Min / Max:120/560, hFE IC/VCE (mA)/(Volts): 1/6

Device Marking:FS, IC (mA):150, VCEO (V):50, hFE Min / Max:270/560, hFE IC/VCE (mA)/(Volts): 1/6

Device Marking:BS, IC (mA):150, VCEO (V):50, hFE Min / Max:270/560, hFE IC/VCE (mA)/(Volts): 1/6

VDSS (V):60, VGS(V):20, ID (A) TA:4.4, VGSth Min (V):1, VGSth Max (V):3

数字温度传感器 , DFN6 , 2.00mm × 2.00mm , 0.015625 , , -55~125