OP1

Infrared LED, 935nm

Ceramic Capacitor, Ceramic

Strip Terminal Block,

DUAL OP-AMP, 3000uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8

DUAL OP-AMP, 600 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, CDIP14, HERMETIC SEALED, CERAMIC, DIP-14

Operational Amplifier, 1 Func, 4500uV Offset-Max, BIPolar, TO-99, 8 PIN

Infrared LED, 3mm, 1-Element, 935nm, ROHS COMPLIANT, PLASTIC PACKAGE-2

Operational Amplifier, 1 Func, 750uV Offset-Max, BIPolar, CDIP8,

IC OP-AMP, 5000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO5, SOT-23, 5 PIN, Operational Amplifier

OP-AMP, 100uV OFFSET-MAX, 0.6MHz BAND WIDTH, PDSO8, MS-012AA, SOIC-8

IC OP-AMP, 3000 uV OFFSET-MAX, 26 MHz BAND WIDTH, CDIP8, HERMETIC SEALED, CERAMIC, DIP-8, Operational Amplifier

Operational Amplifier, 1 Func, 20uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8

Infrared LED, 930nm,

Operational Amplifier, 1 Func, 2000uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, CERAMIC, DIP-8

Yes, 表面贴装, SOP16_150MIL, -40℃~+85℃, Active, 8051, 14, 4KB, 闪存, 2.5V~5.5V, 内部/外部, 256B, 1KB, 9.90 x 3.90mm, 1.60mm, Active, 35MHz, 16Pin

2.4G transceiver chip, frequency hopping ack, data rate: up to 1Mbps, transmission distance 200m

Yes, 表面贴装, SOP16_150MIL, -40℃~+85℃, Active, 8051, 8KB, 闪存, 1.9V~5.5V, 内部/外部, 256B, 4KB, 9.90 x 3.90mm, 1.60mm, Active, 38MHz, 16Pin

表面贴装, SOP16_150MIL, Active, 8051, 2.5V~5.5V, Active

Yes, 表面贴装, SOP16_150MIL, -40℃~+85℃, Active, 8051, 12, 2.4V~3.6V, 内部/外部, 256B, 1KB, 9.90 x 3.90mm, 1.60mm, Active, 35MHz, 16Pin, 1.27mm, 4KB

Yes, 表面贴装, SOP16_150MIL, -40℃~+85℃, Active, 8051, 12, 4KB(4Kx8), 闪存, 3.5V~5.5V, 内部/外部, 256B, 1KB, 9.90 x 3.90mm, 1.60mm, Active, 35MHz, 16Pin, 1.27mm, 4KB