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手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2N1016 | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| 2N1016E | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| AD | F3L200R07PE4BOSA1 | Infineon Technologies | IGBT模块,F3L200R07 - IGBT Module | |||||
| 2N1016D | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| JAN2N1016D | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN | - | |||||
| 2N1016B | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| JAN2N1016C | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN | - | |||||
| 2N1016C | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| 2N1016A | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), NPN | - | |||||
| JAN2N1016B | Silicon Transistor Corporation | Power Bipolar Transistor, 7.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin, TO-82, 2 PIN | - | |||||
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