对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
1F3(G) | Luguang Electronic Technology Co Ltd | Fast Recovery Diode, Case Style : R-1; IAV (A) : 1.0; VRRM (V) : 200; IFSM (A) : 25; VF (V) : 1.3; @IAV (A): 1.0; IR (µA) TA=25ºC: 5.0; TRR (nS): 150 | - | |||||
AD | RJK03C0DPA-00#J53 | Renesas | MOSFET/FET,N-Channel Power MOSFET Power Switching |