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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1N5470 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| 1N5470C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| AD | PESD5V0X1ULD,315 | Nexperia | ESD/TVS/Surge/OVP,Nexperia PESD5V - Ultra low capacitance unidirectional ESD protection diode | |||||
| 1N5470A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5470A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| 1N5470B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5470B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5470C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5470 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5470C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5470 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5470A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5470B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
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