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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1N5452 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| 1N5452C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| AD | PMEG45U10EPDAZ | Nexperia | 整流器/肖特基二极管,Nexperia PMEG45U10EPD - 45V, 10A extremely low VF MEGA Schottky barrier rectifier | |||||
| TX-1N5452B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5452C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| 1N5452A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| 1N5452B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5452C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5452 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5452A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5452 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TX-1N5452A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
| TXB-1N5452B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 47pF C(T), 30V, Silicon, Abrupt, DO-7 | - | |||||
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