对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
1N4806 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4806A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
AD | PESD5V0S1ULD,315 | Nexperia | ESD/TVS/Surge/OVP,PESD5V0S1ULD - Unidirectional ESD protection diode | |||||
TX-1N4806 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4806B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
1N4806D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
1N4806B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
1N4806C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4806C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4806 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4806D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4806A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4806D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TX-1N4806B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
1N4806A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - | |||||
TXB-1N4806C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 18pF C(T), 99V, Silicon, Abrupt, DO-14 | - |