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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TX-1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| AD | PESD5V0S1ULD,315 | Nexperia | ESD/TVS/Surge/OVP,PESD5V0S1ULD - Unidirectional ESD protection diode | |||||
| 1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| 1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TX-1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TX-1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TX-1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TXB-1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TXB-1N4801D | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TXB-1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TX-1N4801C | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| 1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| 1N4801A | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TXB-1N4801 | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
| TXB-1N4801B | Lockheed Martin Microwave | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 110V, Silicon, Abrupt, DO-14 | - | |||||
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