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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1080 | Lockheed Martin Microwave | Directional Coupler, 8200MHz Min, 12400MHz Max | - | |||||
| GC1510-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 30V, Silicon, Abrupt | - | |||||
| AD | HMC794LP3ETR | Analog Devices | 射频/微波组件,HMC794 - 2 GHz Low Noise Programmable Divider (N = 1 to 4) SMT | |||||
| GC1610-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 45V, Silicon, Abrupt | - | |||||
| TXB-GC51110-80 | Lockheed Martin Microwave | Variable Capacitance Diode, C Band to KA Band, 2.7pF C(T), Gallium Arsenide, Abrupt | - | |||||
| GC1710-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 60V, Silicon, Abrupt | - | |||||
| TXB-GC1510-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 30V, Silicon, Abrupt | - | |||||
| TX-GC1510-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 30V, Silicon, Abrupt | - | |||||
| TX-GC1610-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 45V, Silicon, Abrupt | - | |||||
| TXB-GC1810-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 90V, Silicon, Abrupt | - | |||||
| TX-GC1810-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 90V, Silicon, Abrupt | - | |||||
| TX-GC1710-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 60V, Silicon, Abrupt | - | |||||
| GC1810-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 90V, Silicon, Abrupt | - | |||||
| TX-GC51110-80 | Lockheed Martin Microwave | Variable Capacitance Diode, C Band to KA Band, 2.7pF C(T), Gallium Arsenide, Abrupt | - | |||||
| GC51110-80 | Lockheed Martin Microwave | Variable Capacitance Diode, C Band to KA Band, 2.7pF C(T), Gallium Arsenide, Abrupt | - | |||||
| TXB-GC1610-80 | Lockheed Martin Microwave | Variable Capacitance Diode, X Band, 5.6pF C(T), 45V, Silicon, Abrupt | - | |||||
| TXB-GC1710-80 | Lockheed Martin Microwave | Variable Capacitance Diode, S Band, 5.6pF C(T), 60V, Silicon, Abrupt | - | |||||
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