对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
AF2301PW | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
AF2301PWLA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | - | |||||
AD | CLF1G0060-30 | Ampleon | 射频/微波组件,CLF1G0060-30 - 30W Broadband RF power GaN HEMT | |||||
AF2301PWL | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOT-23, 3 PIN | - | |||||
AF2301PWA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - |