对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
1MBH30D-060 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor, 58A I(C), 600V V(BR)CES, N-Channel, TO-3PL, 3 PIN | - | |||||
1MBH30D-060-S06TT | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor, | - | |||||
AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM |