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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| EPC2012 | Efficient Power Conversion | Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 | ￥38.1802 | |||||
| EPC2012CENGR | Efficient Power Conversion | Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 1.70 X 0.90 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 | - | |||||
| AD | EPCQ256SI16N | Arrow | FPGA Configuration Flash Memory | |||||
| EPC2012C | Efficient Power Conversion | Power Field-Effect Transistor, 5A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4 | ￥13.5747 | |||||
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