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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| EPC2010 | Efficient Power Conversion | Power Field-Effect Transistor, 12A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7 | ￥57.7730 | |||||
| EPC2010CENGR | Efficient Power Conversion | Power Field-Effect Transistor, 22A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 3.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-7 | - | |||||
| AD | EPCQ256SI16N | Arrow | FPGA Configuration Flash Memory | |||||
| EPC2010C | Efficient Power Conversion | Power Field-Effect Transistor, 22A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-7 | ￥34.1783 | |||||
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