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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| FQD17N08LTF | Rochester Electronics LLC | 12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD9N15TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 7A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| AD | BLF7G20LS-90P,118 | Ampleon | 射频/微波组件,BLF7G20LS-90P, Power LDMOS transistor, SOT1121 (ACC-4L) | |||||
| FQD11P06 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD10N20CTM | Rochester Electronics LLC | 7.8A, 200V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, DPAK-3 | - | |||||
| FQD8P10TF | Rochester Electronics LLC | 6.6A, 100V, 0.53ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD13N06TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD6N25TM | Rochester Electronics LLC | 4.4A, 250V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | - | |||||
| FQD7P06TF | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD3N60 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD24N08 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | - | |||||
| FQD7P20 | Inchange Semiconductor Company Ltd | MOSFETs;-5.7A;-200V;DPAK/TO-252 | - | |||||
| FQD50P06 | Inchange Semiconductor Company Ltd | MOSFETs;-50A;-60V;TO-220 | - | |||||
| FQD50N06 | Inchange Semiconductor Company Ltd | MOSFETs;50A;60V;TO-252 | - | |||||
| FQD7N10LTM | UMW 友台半导体 | TO-252 ROHS | - | |||||
| FQD13N06LTM | UMW 友台半导体 | TO-252 ROHS | - | |||||
| FQD19N10LTM | UMW 友台半导体 | TO-252 ROHS | - | |||||
| FQD17P06TM | UMW 友台半导体 | TO-252 ROHS | - | |||||
| FQD13N10 | Inchange Semiconductor Company Ltd | MOSFETs;10A;100V;DPAK/TO-252 | - | |||||
| FQD20N06 | UMW 友台半导体 | TO-252 ROHS | - | |||||
| FQD13N10LTM | UMW 友台半导体 | TO-252 ROHS | - | |||||
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