AM9

Optoelectronic Device

Static Column DRAM, 256KX1, 120ns, CMOS, PDIP16, PLASTIC, DIP-16

SAW Filter,

Multiplexer, 1-Func, 8 Line Input, TTL, PDIP16

Parallel In Parallel Out

DC/DC Converter; Product Weight (grams): 7.3; Input voltage min (V): 18; Input voltage max (V): 75; Output voltage min: 24; Output voltage max: 24; Output voltage dual assymetric (y/n): Single; Output Power (W): 9; Max Output current (A): 0.375; Efficiency (%): 89; Max Capacitive load (µF): 200; Package type: SIP8; Mounting: PCB; W (in): 0.38; L (in): 0.86; H (in): 0.44; W (mm): 9.6; L (mm): 21.8; H (mm): 11.2; Min Operating temperature: -40; Max operating temperature (°C): 85; Isolation (VDC): 1600; EMC compliance 2: EN 55032 Class A; Case material: Copper ; Application 4 (building automation/IoT): 1; MTBF (h): 900000; Derating : 60; Voltage Accuracy (%): ±1; Line Regulation (% of Vin): ±0.2; Load Regulation %: ±0.5; Ripple & Noise (mV p-p): 75; Switching Frequency typ (KHz): 500; Short circuit protection: Continuous; On/Off Control: 1

DRAM, 4KX1, 300ns, MOS, PDIP22

Standard SRAM, 1KX4, 450ns, MOS, CDIP18

Standard SRAM, 64KX1, 45ns, CMOS, CQCC22

Standard SRAM, 1KX4, 300ns, NMOS, CDIP18, HERMETIC SEALED, CERAMIC, DIP-18

Standard SRAM, 1KX4, 45ns, NMOS, CQCC28, CERAMIC, LCC-28

Standard SRAM, 8KX8, 200ns, CMOS, CDIP28, 0.600 INCH, HERMETIC SEALED, SIDE BRAZED, CERAMIC, DIP-28

Data Encryption Circuit, MOS, CDIP40, HERMETIC SEALED, CERDIP-40

Standard SRAM, 16KX4, 70ns, CMOS, CDIP24

Standard SRAM, 1KX4, 35ns, NMOS, CQCC28, CERAMIC, LCC-28

ESD二极管, 150mW, 12V, 16.4V, 1mA, 24V, 50pF

ESD二极管, 150mW, 4.3V, 7.14V, 1mA, 13.8V, 6.7pF

编织套管，300M;

ESD二极管, 150mW, 5.0V, 9.0V, 1mA, 10.2V, 1A, 0.4pF

编织套管，50M;