2N7002T

Small Signal MOSFET; Channel Polarity: N channel; PD Max (W): 0.15W; V(BR)DSS Min (V): 60V; ID Max (A): 0.115A; RDS(ON) Max (Ω): 7.5 Ohm; ID (A): 0.05A; VGS (V): 5V; ID (mA): 250mA; GFS Min (S): 0.08 S; VDS (V): 10V; ID (A) 1: 0.2A; Package: SOT-523

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ULTRA SMALL PACKAGE-3

Transistor

N-Channel Enhancement Mode Field Effect Transistor 60V, 115mA, 2Ω, 3000-REEL

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transistor

Transistor,

Transistor

TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3

Small Signal Field-Effect Transistor,

Small Signal Field-Effect Transistor,

Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236,

Small Signal Field-Effect Transistor

SOT-523, YFW佑风微, 晶体管, 场效应管

Id:0.115A, Vds:60V, Vgs:±20V

中压MOS管, SOT-523, 60V, 300mA, 3Ω@4.5V, 3V@250μA, N沟道

TRANS MOSFET SMD 2N7002L SOT23

场效应晶体管, 0.15W, 60V, 0.115A, 5V, 1~2GS