对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2N7002 | Bytesonic Corporation | Transistor | - | |||||
2N7002 | KEC | Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
AD | CLF1G0060-10 | Rochester Electronics | 射频/微波组件,CLF1G0060-10 - 10W Broadband RF power GaN HEMT | |||||
2N7002 | STMicroelectronics | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT PACKAGE-3 | - | |||||
2N7002 | Samsung Semiconductor | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
2N7002 | Silicon Standard Corp | Transistor, | - | |||||
2N7002 | National Semiconductor Corporation | TRANSISTOR 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | - | |||||
2N7002 | InterFET Corporation | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, | - | |||||
2N7002 | Calogic Inc | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | - | |||||
2N7002 | Galaxy Semi-Conductor Co Ltd | Transistor, | - | |||||
2N7002 | DC Components Co Ltd | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | - | |||||
2N7002W | Galaxy Microelectronics | , Diodes, Single, N, N, 0.2W, 60W, ±20V | - | |||||
2N7002HL | Galaxy Microelectronics | , Diodes, Single, N, Y, 0.15W, 60W, ±20V | - | |||||
2N7002K | Galaxy Microelectronics | , Diodes, Single, N, Y, 0.35W, 63W, ±20V | - | |||||
2N7002SH | Galaxy Microelectronics | , Diodes, Single, N, Y, 0.35W, 60W, ±20V | - | |||||
2N7002DW | Galaxy Microelectronics | , Diodes, Single, N, N, 0.2W, 60W, ±20V | - | |||||
2N7002K | Luguang Electronic Technology | 场效应晶体管, 0.35W, 60V, 0.34A, 10V, 1GS | - | |||||
2N7002W | Luguang Electronic Technology | 场效应晶体管, 0.2W, 60V, 0.115A, 5V, 1~2GS | - | |||||
2N7002KDW-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified:Y, ESD:Y, Polarity:N/N, Config.(V):Dual, VDS(±V):60, VGS(A):20, ID(10V):0.1, RDS(on) Max. (mΩ)(7V):3000 | - | |||||
L2N7002SLT1G | LRC Leshan Radio Co Ltd | VDSS (V):60, VGS(V):20, ID (A):0.32, VGSth Min (V):1, VGSth Max (V):2 | - | |||||
L2N7002M3T5G | LRC Leshan Radio Co Ltd | VDSS (V):60, VGS(V):20, ID (A):0.115, VGSth Min (V):1, VGSth Max (V):2.2 | - |