2n6851_2n6851中文资料_datasheet5电子元器件查询网

对比	型号	厂商	描述	价格
对比	2N6851	Harris Semiconductor	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851	Atmel Corporation	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	请求模型数据手册替代料
AD	CAB006M12GM3	Arrow	Trans MOSFET N-CH SiC 1.2KV 200A 36-Pin Case GM3 立即购买 Molex 最新活动新客9折		立即购买了解更多新客9折
对比	2N6851	TT Electronics Resistors	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	2N6851	Intersil Corporation	4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851	TT Electronics Power and Hybrid / Semelab Limited	4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	2N6851	International Rectifier	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851	Thomson Consumer Electronics	Transistor	获取价格 -	请求模型数据手册替代料
对比	2N6851	Infineon Technologies AG	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	ECAD 数据手册替代料
对比	2N6851EPBF	International Rectifier	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851EAPBF	International Rectifier	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851E	International Rectifier	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851EB	Infineon Technologies AG	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	请求模型数据手册替代料
对比	2N6851R1	TT Electronics Resistors	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	2N6851E	Infineon Technologies AG	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	请求模型数据手册替代料
对比	2N6851TX	International Rectifier	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851EC	Infineon Technologies AG	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	请求模型数据手册替代料
对比	2N6851TXV	Intersil Corporation	4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF	获取价格 -	请求模型数据手册替代料
对比	2N6851LCC4-JQR-A	TT Electronics Resistors	Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN	获取价格 -	请求模型数据手册替代料
对比	2N6851SCC5206/003	Infineon Technologies AG	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,	获取价格 -	请求模型数据手册替代料
对比	2N6851EC	International Rectifier	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF	获取价格 -	请求模型数据手册替代料

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