对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
2N6788 | TT Electronics Resistors | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | - | |||||
2N6788 | New Jersey Semiconductor Products, Inc. | Trans MOSFET N-CH 100V 6A 3-Pin TO-39 | - | |||||
AD | BUV21G | Onsemi | 双极晶体管,Switchmode NPN Silicon Power Transistor | |||||
2N6788 | General Electric Solid State | Transistor | - | |||||
2N6788 | Unitrode Corporation | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | - | |||||
2N6788 | Motorola Mobility LLC | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-39 | - | |||||
2N6788 | Harris Semiconductor | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | - | |||||
2N6788 | Infineon Technologies AG | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | - | |||||
2N6788 | Microsemi FPGA & SoC | Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, FORMERLY TO-39, 3 PIN | - | |||||
2N6788 | Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
2N6788 | TT Electronics Power and Hybrid / Semelab Limited | 6A, 100V, 0.345ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | - | |||||
2N6788 | International Rectifier | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | ¥63.5202 | |||||
2N6788 | Motorola Semiconductor Products | Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | - | |||||
2N6788 | Intersil Corporation | 6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | - | |||||
2N6788 | Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-39 | - | |||||
2N6788EA | International Rectifier | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | - | |||||
2N6788EA | Infineon Technologies AG | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | - | |||||
2N6788EB | International Rectifier | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | - | |||||
2N6788-QR-BR1 | TT Electronics Resistors | Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | - | |||||
2N6788ECPBF | Infineon Technologies AG | 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | - | |||||
2N6788LCC4-JQR-A | TT Electronics Resistors | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-18 | - |