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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 2N1183A | Digitron Semiconductors | TRANSISTOR,BJT,PNP,30V V(BR)CEO,3A I(C),TO-8 | - | |||||
| 2N1183A | Transistor & Electronic Co | Transistor | - | |||||
| AD | FGY120T65SPD-F085 | Onsemi | IGBT/MOSFET驱动器,FGY120T65 - IGBT, 650V, 120A Field Stop, Trench With Soft Fast Recovery Diode | |||||
| 2N1183A | Silicon Transistor Corporation | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | - | |||||
| 2N1183A | Hi-Tron Semiconductor Corp | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | - | |||||
| 2N1183A | GPD Optoelectronics Corp | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin | - | |||||
| 2N1183A | Swampscott Electronics Co Inc | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, PNP, Germanium, TO-8, Metal, 3 Pin, TO-8, 3 PIN | - | |||||
| 2N1183A | Semitronics Corp | Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, TO-8, 3 PIN | - | |||||
| 2N1183A | Central Semiconductor Corp | Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, TO-8, TO-8, 3 PIN | - | |||||
| JAN2N1183A | GPD Optoelectronics Corp | Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin | - | |||||
| TPI-2512N-1183A | International Manufacturing Services Inc | Fixed Resistor, Thin Film, 0.5W, 118000ohm, 150V, 0.05% +/-Tol, 10ppm/Cel, Surface Mount, 2512, CHIP, ROHS COMPLIANT | - | |||||
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