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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1N5225B | Secos Corporation | Zener Diode, | - | |||||
| 1N5225B | Digitron Semiconductors | Zener Diode; Max Peak Repetitive Reverse Voltage: 5; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 29 | - | |||||
| AD | PMEG2010AEB,115 | Nexperia | 整流器/肖特基二极管,PMEG2010AEB - 20V, 1A low VF MEGA Schottky barrier rectifier in SOD523 package | |||||
| 1N5225B | Philips Semiconductors | Zener Diode, 3V V(Z), 5%, 0.5W, | - | |||||
| 1N5225B | Galaxy Semi-Conductor Co Ltd | Zener Diode, 3V V(Z), 5%, 0.5W, | - | |||||
| 1N5225B | PRO-AN Electronic Co Ltd | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | Motorola Semiconductor Products | Zener Diode, 3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-204AH, GLASS, DO-35, 2 PIN | - | |||||
| 1N5225B | WEITRON INTERNATIONAL CO., LTD. | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | North American Philips Discrete Products Div | Zener Diode, 3V V(Z), 5%, 0.5W, | - | |||||
| 1N5225B | Silicon-Based Technology Corp | Zener Diode | - | |||||
| 1N5225B | American Power Devices Inc | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | International Components Corporation | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | Formosa Microsemi Co Ltd | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | Galaxy Microelectronics | Zener Diode; Configuration: Single; Tolerance: 0.05; VZ Typ (V): 3; P Max (mW): 500; Package: DO-35 | - | |||||
| 1N5225B | Comchip Technology Corporation Ltd | Zener Diode, 3V V(Z), 5%, 0.5W, | - | |||||
| 1N5225B | Shenzhen Yixinsemi Electronics Co Ltd | Zener Diode | - | |||||
| 1N5225B | FCI Semiconductor | Zener Diode | - | |||||
| 1N5225B | Yangzhou Yangjie Electronics Co Ltd | Zener Diode, 3V V(Z), 0.5W | - | |||||
| 1N5225B | NTE Electronics Inc | ; Power Dissipation, Pd:500mW; Package/Case:DO-35; Mounting Type:Through Hole; Power (Ptot):0.5W | - | |||||
| 1N5225B | Kuwait Semiconductor Co Ltd | Zener Diode, 3V V(Z), 5%, 0.5W | - | |||||
| 1N5225B | Luguang Electronic Technology Co Ltd | Zener Diode, Case Style : DO-35; Pd (W) : 0.5; Vz (V) Min: -; Vz (V) Nom: 3; Vz (V) Max: -; Vz @lzt (mA): 20; Leakage Current IR (uA): 50; Leakage Current VR (V): 1.0 | - | |||||
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