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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 12N60G-TF1-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, 12A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220F1, 3 PIN | - | |||||
| 12N60G-ML-TF3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, | - | |||||
| AD | CLF1G0035-100 | Ampleon | 射频/微波组件,CLF1G0035-100 - 100W Broadband RF power GaN HEMT | |||||
| 12N60L-C-TF1-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, | - | |||||
| 12N60L-TC-TF3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, | - | |||||
| 12N60G-A-TA3-T | Unisonic Technologies Co Ltd | Transistor | - | |||||
| 12N60KG-MT-TF3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor | - | |||||
| 12N60-A-TA3-T | Unisonic Technologies Co Ltd | Transistor | - | |||||
| 12N60G-TC-TF3-T | Unisonic Technologies Co Ltd | Power Field-Effect Transistor, | - | |||||
| 12N60-B-TA3-T | Unisonic Technologies Co Ltd | Transistor | - | |||||
| AOTF12N60 | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220F | - | |||||
| FQPF12N60C | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220F | - | |||||
| AOW12N60 | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-262 | - | |||||
| BL12N60F | Galaxy Microelectronics | , Diodes, Single, N, N, 42W, 600W, ±30V | - | |||||
| YFW12N60AC | YFW佑风微 | TO-220C, YFW佑风微, 晶体管, 场效应管 | - | |||||
| AOT12N60 | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220 | - | |||||
| AOT12N60FD | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220 | - | |||||
| 12N60 | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220 | - | |||||
| AOB12N60FD | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-263 | - | |||||
| AOTF12N60FD | Inchange Semiconductor Company Ltd | MOSFETs;12A;600V;TO-220F | - | |||||
| 12N60A | 广东奥科 | - | ||||||
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