对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
LNB8930DT0AG | LRC Leshan Radio Co Ltd | VDSS (V):150, VGS(V):20, ID (A) TA:7, VGSth Min (V):2, VGSth Max (V):4 | - | |||||
LTVS16H7.0T5G | LRC Leshan Radio Co Ltd | VRWM (V):7, VBR (V) Min:7.6, IR @VRWM (μA):2, CJ (pF):750, VC @IPP (V):20 | - | |||||
AD | ESD230B1W0201E6327XTSA1 | Infineon Technologies | ESD/TVS/Surge/OVP,ESD230 - Multi-Purpose ESD Device | |||||
LTVS32H7.0T5G | LRC Leshan Radio Co Ltd | VRWM (V):7, VBR (V) Min:7.6, IR @VRWM (μA):2, CJ (pF):750, VC @IPP (V):20 | - | |||||
LTVS20H7.0T5G | LRC Leshan Radio Co Ltd | VRWM (V):7, VBR (V) Min:7.6, IR @VRWM (μA):2, VC @IPP (V):21, IPP tp=8/20μs (A):180 | - | |||||
PZS51A5V6CS | PanJit Semiconductor | Product Status:Active, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):5.6, VZ @ IZT Min.(V):5.49, VZ @ IZT Max.(Ω):5.71, IZT(Ω):0.05, IR @ VR Max.(V):7, IR @ VR Max.:4.2 | - | |||||
PEC3107S1Q | PanJit Semiconductor | Product Status:Active, Configuration:BI, Number of protected lines(V):1, VRWM Max.(V):7, VBR Min.(µA):8, IR @ VRWM Max.(V):1, VC @ IPP Max.(A):15, IPP(pF):2, CJ Max.:10 | - | |||||
BZT52-B7V5S-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):7.5, VZ @ IZT Min.(V):7.35, VZ @ IZT Max.(Ω):7.65, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
BZT52-B8V7S-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):8.7, VZ @ IZT Min.(V):8.53, VZ @ IZT Max.(Ω):8.87, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
MMSZ5248A-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):500, VZ(V):2, VZ @ IZT Nom.(V):18, VZ @ IZT Min.(V):17.64, VZ @ IZT Max.(Ω):18.36, ZZT @ IZT Max.(mA):21, IZT(Ω):7 | - | |||||
MMSZ5248AS-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):18, VZ @ IZT Min.(V):17.64, VZ @ IZT Max.(Ω):18.36, ZZT @ IZT Max.(mA):21, IZT(Ω):7 | - | |||||
BZT52-B7V5-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):410, VZ(V):2, VZ @ IZT Nom.(V):7.5, VZ @ IZT Min.(V):7.35, VZ @ IZT Max.(Ω):7.65, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
BZT52-B8V2-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):410, VZ(V):2, VZ @ IZT Nom.(V):8.2, VZ @ IZT Min.(V):8.04, VZ @ IZT Max.(Ω):8.36, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
BZT52-B8V2S-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):8.2, VZ @ IZT Min.(V):8.04, VZ @ IZT Max.(Ω):8.36, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
MMSZ5234AS-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):200, VZ(V):2, VZ @ IZT Nom.(V):6.2, VZ @ IZT Min.(V):6.08, VZ @ IZT Max.(Ω):6.32, ZZT @ IZT Max.(mA):7, IZT(Ω):20 | - | |||||
BZT52-B8V7-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):410, VZ(V):2, VZ @ IZT Nom.(V):8.7, VZ @ IZT Min.(V):8.53, VZ @ IZT Max.(Ω):8.87, ZZT @ IZT Max.(mA):7, IZT(Ω):5 | - | |||||
MMSZ5234A-AU | PanJit Semiconductor | Product Status:Active, AEC-Q101 Qualified(mW):Y, PD(%):500, VZ(V):2, VZ @ IZT Nom.(V):6.2, VZ @ IZT Min.(V):6.08, VZ @ IZT Max.(Ω):6.32, ZZT @ IZT Max.(mA):7, IZT(Ω):20 | - |