Mon Nov 25 2024 13:58:32 GMT+0800 (China Standard Time)

随身查
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手机随时查器件
闪存: 312,420 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (50)
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制造商 (50)
内存密度 (50)
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内存宽度 (16)
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组织 (50)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 部门规模
组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 启动块 命令用户界面 通用闪存接口 数据轮询 数据保留时间-最小值 耐久性 功能数量 端口数量 部门数/规模 字数代码 字数 工作模式 输出特性 页面大小 并行/串行 编程电压
就绪/忙碌
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
切换位
类型
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Source Content uid
mfrid
Modified On
零件包装代码
包装说明
针数
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
交付时间
YTEOL
对比
SST39VF1601C-70-4I-EKE
Microchip Technology Inc
查询价格
Yes Yes Active 16.7772 Mbit 16 8K,4K,16K,32K 1MX16 3 V 70 ns FLASH BOTTOM BOOT BLOCK BOTTOM YES YES YES 100 100000 Write/Erase Cycles 1 1 1,2,1,31 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 3 V YES 20 µA 35 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PDSO-G48 Not Qualified e3 3 85 °C -40 °C 260 TS 16949 40 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) - annealed GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm SST39VF1601C-70-4I-EKE 2188 2024-11-15 23:04:49 TSOP1 TSOP-48 48 compliant Thailand EAR99 8542.32.00.51 4 weeks 10.29
对比
MX29LV800CBTI-70G
Macronix International Co Ltd
查询价格
Yes Yes Active 8.3886 Mbit 16 16K,8K,32K,64K 512KX16 3 V 70 ns FLASH 8 BOTTOM YES YES YES 1 1,2,1,15 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES 5 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PBGA-B48 Not Qualified e3 3 85 °C -40 °C 260 40 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin (Sn) BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm 4307504 2024-11-15 23:15:17 TSOP TFBGA, TSSOP48,.8,20 48 unknown Taiwan 3A991.B.1.A 8542.32.00.51 12 weeks 5
对比
SST39VF1601C-70-4C-B3KE
Microchip Technology Inc
查询价格
Yes Yes Active 16.7772 Mbit 16 8K,4K,16K,32K 1MX16 3 V 70 ns FLASH BOTTOM BOOT BLOCK BOTTOM YES YES YES 100 100000 Write/Erase Cycles 1 1 1,2,1,31 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 3 V YES 20 µA 35 µA 3.6 V 2.7 V CMOS COMMERCIAL YES NOR TYPE R-PBGA-B48 Not Qualified e1 3 70 °C 260 TS 16949 40 48 PLASTIC/EPOXY TFBGA BGA48,6X8,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 800 µm BOTTOM 1.2 mm 8 mm 6 mm SST39VF1601C-70-4C-B3KE 2188 2024-11-15 23:04:49 BGA TFBGA-48 48 compliant Philippines, Taiwan, Thailand 3A991.B.1.A 8542.32.00.51 4 weeks 10.29
对比
S25FL128SAGMFI003
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH IT ALSO CONFIGURED AS 256M X 1 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 100 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-G16 Not Qualified e3 3 85 °C -40 °C 260 AEC-Q100 30 16 PLASTIC/EPOXY SOP SOP16,.4 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.65 mm 10.3 mm 7.5 mm 2065 2024-11-15 23:16:10 compliant Mainland China, Taiwan, Thailand 53 weeks 1 day 9.8
对比
S25FL128SAGMFV003
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS NOR TYPE HARDWARE/SOFTWARE R-PDSO-G16 e3 3 105 °C -40 °C 260 30 16 PLASTIC/EPOXY SOP SOP16,.4 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.65 mm 10.3 mm 7.5 mm 2065 2024-11-15 23:16:10 compliant 10 weeks 9.8
对比
S25FL128SAGMFI000
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH IT ALSO CONFIGURED AS 256M X 1 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 100 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-G16 Not Qualified e3 3 85 °C -40 °C 260 AEC-Q100 30 16 PLASTIC/EPOXY SOP SOP16,.4 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.65 mm 10.3 mm 7.5 mm 2065 2024-11-15 23:18:54 compliant Mainland China, Taiwan, Thailand 2 days 9.8
对比
MX29F040CQI-70G
Macronix International Co Ltd
查询价格
Yes Yes Active 4.1943 Mbit 8 64K 512KX8 5 V 70 ns FLASH YES YES 100000 Write/Erase Cycles 1 8 512000 524.288 k ASYNCHRONOUS PARALLEL 5 V 5 µA 50 µA 5.5 V 4.5 V CMOS INDUSTRIAL YES NOR TYPE R-PQCC-J32 Not Qualified e3 3 85 °C -40 °C 260 40 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES MATTE TIN J BEND 1.27 mm QUAD 3.55 mm 14.05 mm 11.43 mm 4307504 2024-11-15 23:15:17 LCC ROHS COMPLIANT, PLASTIC, MS-016, LCC-32 32 compliant Taiwan 3A991.B.1.A 8542.32.00.51 12 weeks 3.15
对比
S25FL128SAGNFI003
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 100 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-N8 Not Qualified e3 3 85 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 2065 2024-11-15 23:16:10 compliant 53 weeks 1 day 9.8
对比
S25FL128SAGNFV001
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-N8 Not Qualified e3 3 105 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 2065 2024-11-15 23:18:48 compliant 2 days 9.8
对比
S25FL128SAGNFI000
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 100 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-N8 Not Qualified e3 3 85 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 2065 2024-11-15 23:18:54 compliant Taiwan, Thailand 2 days 9.8
对比
S29GL01GS11FHIV10
Infineon Technologies AG
查询价格
Yes Active 1.0737 Gbit 16 64K 64MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 1024 64000000 67.1089 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 100 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE R-PBGA-B64 e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 RECTANGULAR GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 13 mm 11 mm 2065 2024-11-15 23:18:54 compliant 2 days 9.8
对比
S29GL512S11DHIV23
Infineon Technologies AG
查询价格
Yes Active 536.8709 Mbit 16 64K 32MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 512 32000000 33.5544 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 100 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE S-PBGA-B64 e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm 2065 2024-11-15 23:16:04 compliant 8 weeks 9.8
对比
S25FL128SAGNFM000
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V 100 µA 3.6 V 2.7 V CMOS AUTOMOTIVE NOR TYPE 500 ms R-PDSO-N8 e3 3 125 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 2065 2024-11-15 23:16:10 compliant 10 weeks 9.8
对比
S29GL128S10DHIV10
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 16 64K 8MX16 3 V 100 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 128 8000000 8.3886 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 100 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE S-PBGA-B64 e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm 2065 2024-11-15 23:18:54 compliant 2 days 9.8
对比
S25FL064LABMFI010
Infineon Technologies AG
查询价格
Yes Active 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH IT ALSO HAVE X1 MEMORY WIDTH 2 1 8000000 8.3886 M SYNCHRONOUS 3-STATE SERIAL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL S-PDSO-G8 e3 3 85 °C -40 °C 260 8 PLASTIC/EPOXY SOP SQUARE SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.16 mm 5.28 mm 5.28 mm 2065 2024-11-15 23:18:48 compliant Mainland China, Taiwan 2 days 6.8
对比
S25FL128SAGNFV003
Infineon Technologies AG
查询价格
Yes Active 134.2177 Mbit 8 16MX8 3 V 133 MHz FLASH 2 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE 500 ms HARDWARE/SOFTWARE R-PDSO-N8 Not Qualified e3 3 105 °C -40 °C 260 AEC-Q100 30 8 PLASTIC/EPOXY HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 2065 2024-11-15 23:16:10 compliant 10 weeks 9.8
对比
S25FL064LABMFM010
Infineon Technologies AG
查询价格
Yes Active 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH IT ALSO HAVE X1 MEMORY WIDTH 2 1 8000000 8.3886 M SYNCHRONOUS 3-STATE SERIAL 3 V 3.6 V 2.7 V CMOS AUTOMOTIVE S-PDSO-G8 e3 3 125 °C -40 °C AEC-Q100 8 PLASTIC/EPOXY SOP SQUARE SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.16 mm 5.28 mm 5.28 mm 2065 2024-11-15 23:16:10 compliant 9 weeks 6.8
对比
S25FL064LABMFI013
Infineon Technologies AG
查询价格
Yes Active 67.1089 Mbit 8 8MX8 3 V 108 MHz FLASH 2 100000 Write/Erase Cycles 1 8000000 8.3886 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 20 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE R-PDSO-G8 e3 3 85 °C -40 °C 260 8 PLASTIC/EPOXY SOP SOP8,.3 SQUARE SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.16 mm 5.28 mm 5.28 mm 2065 2024-11-15 23:18:48 compliant Mainland China, Taiwan 2 days 6.8
对比
S25FL512SAGMFI011
Infineon Technologies AG
查询价格
Yes Active 512.7537 Mbit 8 64MX8 3 V 133 MHz FLASH 20 100000 Write/Erase Cycles 1 64000000 64.0942 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 300 µA 100 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-PDSO-G16 Not Qualified e3 3 85 °C -40 °C 260 30 16 PLASTIC/EPOXY SOP SOP16,.4 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 2.65 mm 10.3 mm 7.5 mm 2065 2024-11-15 23:18:54 SOIC-16 compliant Mainland China, Taiwan 2 days 9.8
对比
S29GL01GS11DHIV13
Infineon Technologies AG
查询价格
Yes Active 1.0737 Gbit 16 64K 64MX16 3 V 110 ns FLASH YES YES YES 20 100000 Write/Erase Cycles 1 1024 64000000 67.1089 M ASYNCHRONOUS 3-STATE 16 words PARALLEL 3 V YES 100 µA 100 µA 3.6 V 2.7 V CMOS YES NOR TYPE S-PBGA-B64 e1 3 85 °C -40 °C 260 30 64 PLASTIC/EPOXY LBGA BGA64,8X8,40 SQUARE GRID ARRAY, LOW PROFILE YES Tin/Silver/Copper (Sn/Ag/Cu) BALL 1 mm BOTTOM 1.4 mm 9 mm 9 mm 2065 2024-11-15 23:16:10 compliant 8 weeks 9.8
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