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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 部门规模 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 启动块 | 命令用户界面 | 通用闪存接口 | 数据轮询 | 数据保留时间-最小值 | 耐久性 | 功能数量 | 端口数量 | 部门数/规模 | 字数代码 | 字数 | 工作模式 | 输出特性 | 页面大小 | 并行/串行 | 编程电压 | 就绪/忙碌 | 串行总线类型 | 最大待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | 切换位 | 类型 | 最长写入周期时间 (tWC) | 写保护 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | |
对比 | SST39VF1601C-70-4I-EKE | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.7772 Mbit | 16 | 8K,4K,16K,32K | 1MX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G48 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 48 | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) - annealed | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | SST39VF1601C-70-4I-EKE | 2188 | 2024-11-15 23:04:49 | TSOP1 | TSOP-48 | 48 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 10.29 | ||||||||
对比 | MX29LV800CBTI-70G | Macronix International Co Ltd | 查询价格 | Yes | Yes | Active | 8.3886 Mbit | 16 | 16K,8K,32K,64K | 512KX16 | 3 V | 70 ns | FLASH | 8 | BOTTOM | YES | YES | YES | 1 | 1,2,1,15 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 3 V | YES | 5 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin (Sn) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | 4307504 | 2024-11-15 23:15:17 | TSOP | TFBGA, TSSOP48,.8,20 | 48 | unknown | Taiwan | 3A991.B.1.A | 8542.32.00.51 | 12 weeks | 5 | ||||||||||||||
对比 | SST39VF1601C-70-4C-B3KE | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.7772 Mbit | 16 | 8K,4K,16K,32K | 1MX16 | 3 V | 70 ns | FLASH | BOTTOM BOOT BLOCK | BOTTOM | YES | YES | YES | 100 | 100000 Write/Erase Cycles | 1 | 1 | 1,2,1,31 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 V | YES | 20 µA | 35 µA | 3.6 V | 2.7 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PBGA-B48 | Not Qualified | e1 | 3 | 70 °C | 260 | TS 16949 | 40 | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | SST39VF1601C-70-4C-B3KE | 2188 | 2024-11-15 23:04:49 | BGA | TFBGA-48 | 48 | compliant | Philippines, Taiwan, Thailand | 3A991.B.1.A | 8542.32.00.51 | 4 weeks | 10.29 | |||||||||
对比 | S25FL128SAGMFI003 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | IT ALSO CONFIGURED AS 256M X 1 | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-G16 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 16 | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 10.3 mm | 7.5 mm | 2065 | 2024-11-15 23:16:10 | compliant | Mainland China, Taiwan, Thailand | 53 weeks 1 day | 9.8 | ||||||||||||||||||||
对比 | S25FL128SAGMFV003 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-G16 | e3 | 3 | 105 °C | -40 °C | 260 | 30 | 16 | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 10.3 mm | 7.5 mm | 2065 | 2024-11-15 23:16:10 | compliant | 10 weeks | 9.8 | |||||||||||||||||||||||||||
对比 | S25FL128SAGMFI000 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | IT ALSO CONFIGURED AS 256M X 1 | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-G16 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 16 | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 10.3 mm | 7.5 mm | 2065 | 2024-11-15 23:18:54 | compliant | Mainland China, Taiwan, Thailand | 2 days | 9.8 | ||||||||||||||||||||
对比 | MX29F040CQI-70G | Macronix International Co Ltd | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 70 ns | FLASH | YES | YES | 100000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5 µA | 50 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.55 mm | 14.05 mm | 11.43 mm | 4307504 | 2024-11-15 23:15:17 | LCC | ROHS COMPLIANT, PLASTIC, MS-016, LCC-32 | 32 | compliant | Taiwan | 3A991.B.1.A | 8542.32.00.51 | 12 weeks | 3.15 | |||||||||||||||||
对比 | S25FL128SAGNFI003 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 2065 | 2024-11-15 23:16:10 | compliant | 53 weeks 1 day | 9.8 | ||||||||||||||||||||||
对比 | S25FL128SAGNFV001 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 3 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 2065 | 2024-11-15 23:18:48 | compliant | 2 days | 9.8 | ||||||||||||||||||||||
对比 | S25FL128SAGNFI000 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 2065 | 2024-11-15 23:18:54 | compliant | Taiwan, Thailand | 2 days | 9.8 | |||||||||||||||||||||
对比 | S29GL01GS11FHIV10 | Infineon Technologies AG | 查询价格 | Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | R-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 13 mm | 11 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 9.8 | |||||||||||||||||||||
对比 | S29GL512S11DHIV23 | Infineon Technologies AG | 查询价格 | Yes | Active | 536.8709 Mbit | 16 | 64K | 32MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 512 | 32000000 | 33.5544 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | 2024-11-15 23:16:04 | compliant | 8 weeks | 9.8 | |||||||||||||||||||||
对比 | S25FL128SAGNFM000 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 100 µA | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | NOR TYPE | 500 ms | R-PDSO-N8 | e3 | 3 | 125 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 2065 | 2024-11-15 23:16:10 | compliant | 10 weeks | 9.8 | |||||||||||||||||||||||||||||
对比 | S29GL128S10DHIV10 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 16 | 64K | 8MX16 | 3 V | 100 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 128 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 9.8 | |||||||||||||||||||||
对比 | S25FL064LABMFI010 | Infineon Technologies AG | 查询价格 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | S-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | 2024-11-15 23:18:48 | compliant | Mainland China, Taiwan | 2 days | 6.8 | ||||||||||||||||||||||||||||||||
对比 | S25FL128SAGNFV003 | Infineon Technologies AG | 查询价格 | Yes | Active | 134.2177 Mbit | 8 | 16MX8 | 3 V | 133 MHz | FLASH | 2 | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | 500 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 3 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 2065 | 2024-11-15 23:16:10 | compliant | 10 weeks | 9.8 | ||||||||||||||||||||||
对比 | S25FL064LABMFM010 | Infineon Technologies AG | 查询价格 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | IT ALSO HAVE X1 MEMORY WIDTH | 2 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | 3.6 V | 2.7 V | CMOS | AUTOMOTIVE | S-PDSO-G8 | e3 | 3 | 125 °C | -40 °C | AEC-Q100 | 8 | PLASTIC/EPOXY | SOP | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | 2024-11-15 23:16:10 | compliant | 9 weeks | 6.8 | |||||||||||||||||||||||||||||||||
对比 | S25FL064LABMFI013 | Infineon Technologies AG | 查询价格 | Yes | Active | 67.1089 Mbit | 8 | 8MX8 | 3 V | 108 MHz | FLASH | 2 | 100000 Write/Erase Cycles | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 30 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PDSO-G8 | e3 | 3 | 85 °C | -40 °C | 260 | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.28 mm | 2065 | 2024-11-15 23:18:48 | compliant | Mainland China, Taiwan | 2 days | 6.8 | |||||||||||||||||||||||||||
对比 | S25FL512SAGMFI011 | Infineon Technologies AG | 查询价格 | Yes | Active | 512.7537 Mbit | 8 | 64MX8 | 3 V | 133 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 64000000 | 64.0942 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 300 µA | 100 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-G16 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 16 | PLASTIC/EPOXY | SOP | SOP16,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 10.3 mm | 7.5 mm | 2065 | 2024-11-15 23:18:54 | SOIC-16 | compliant | Mainland China, Taiwan | 2 days | 9.8 | |||||||||||||||||||||||
对比 | S29GL01GS11DHIV13 | Infineon Technologies AG | 查询价格 | Yes | Active | 1.0737 Gbit | 16 | 64K | 64MX16 | 3 V | 110 ns | FLASH | YES | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 1024 | 64000000 | 67.1089 M | ASYNCHRONOUS | 3-STATE | 16 words | PARALLEL | 3 V | YES | 100 µA | 100 µA | 3.6 V | 2.7 V | CMOS | YES | NOR TYPE | S-PBGA-B64 | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LBGA | BGA64,8X8,40 | SQUARE | GRID ARRAY, LOW PROFILE | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 1 mm | BOTTOM | 1.4 mm | 9 mm | 9 mm | 2065 | 2024-11-15 23:16:10 | compliant | 8 weeks | 9.8 |