DRAM_DRAM型号_DRAM参数-datasheet5电子元器件查询网

								Most Relevant								Technical																			Compliance			Operating Conditions					Physical											Dimensions			Other
对比	制造商型号	制造商	综合价格	风险等级	是否无铅	是否Rohs认证	生命周期	内存密度	内存宽度	组织	标称供电电压 (Vsup)	最长访问时间	最大时钟频率 (fCLK)	刷新周期	访问模式	内存集成电路类型	其他特性	I/O 类型	交错的突发长度	功能数量	端口数量	字数代码	字数	工作模式	输出特性	自我刷新	连续突发长度	最大待机电流	最小待机电流	最大压摆率	最大供电电压 (Vsup)	最小供电电压 (Vsup)	技术	温度等级	JESD-30 代码	认证状态	JESD-609代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装代码	封装等效代码	封装形状	封装形式	表面贴装	端子面层	端子形式	端子节距	端子位置	座面最大高度	长度	宽度	mfrid	Modified On	包装说明	是否符合REACH标准	Country Of Origin	ECCN代码	HTS代码	交付时间	YTEOL	零件包装代码	针数	Date Of Intro
对比	AS4C4M16SA-7TCN	Alliance Memory Inc	查询价格			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54			3	70 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:06:55	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.02	8 weeks	4
对比	MT41K128M16JT-125:K	Micron Technology Inc	查询价格		Yes	Yes	Active	2.1475 Gbit	16	128MX16	1.35 V	225 ps	800 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	128000000	134.2177 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		195 µA	1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96	Not Qualified	e1		95 °C		260	30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	2024-11-15 23:16:17		compliant		EAR99	8542.32.00.36	14 weeks 1 day	5.1	BGA	96
对比	AS4C4M16SA-6TIN	Alliance Memory Inc	查询价格			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54			3	85 °C	-40 °C			54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:06:55	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.02	8 weeks	4
对比	AS4C8M16SA-7TCN	Alliance Memory Inc	查询价格			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:06:55	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.02	10 weeks	4
对比	MT41K256M16TW-107:P	Micron Technology Inc	查询价格			Yes	Active	4.295 Gbit	16	256MX16	1.35 V				MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH			1	1	256000000	268.4355 M	SYNCHRONOUS		YES					1.45 V	1.283 V	CMOS	OTHER	R-PBGA-B96				95 °C		260	30	96	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	2024-11-15 23:16:17	FBGA-96	not_compliant		EAR99	8542.32.00.36	14 weeks 1 day	5.15
对比	AS4C4M16SA-6TINTR	Alliance Memory Inc	查询价格			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e3	3	85 °C	-40 °C			54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin (Sn)	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	1689	2024-11-15 23:10:23	FBGA-54	compliant	Taiwan	EAR99	8542.32.00.02	8 weeks	4			2018-10-04
对比	AS4C16M16SA-7TCNTR	Alliance Memory Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA		55 µA	3.6 V	3 V	CMOS		R-PDSO-G54			3	70 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:11:22	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.24	8 weeks	4
对比	MT41K64M16TW-107:J	Micron Technology Inc	查询价格			Yes	Active	1.0737 Gbit	16	64MX16	1.35 V	195 ps	933 MHz	8192	MULTI BANK PAGE BURST	DDR3L DRAM	AUTO/SELF REFRESH	COMMON	8	1	1	64000000	67.1089 M	SYNCHRONOUS	3-STATE	YES	8	12 mA		219 µA	1.45 V	1.283 V	CMOS		R-PBGA-B96	Not Qualified	e1				NOT SPECIFIED	NOT SPECIFIED	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	Tin/Silver/Copper (Sn/Ag/Cu)	BALL	800 µm	BOTTOM	1.2 mm	14 mm	8 mm	2190	2024-11-15 23:06:24	8 X 14 MM, LEAD FREE, FBGA-96	compliant		EAR99	8542.32.00.32	12 weeks	5.07
对比	MT48LC8M16A2P-6A:L	Micron Technology Inc	查询价格			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5.4 ns	167 MHz	4096	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	8000000	8.3886 M	SYNCHRONOUS	3-STATE	YES	1,2,4,8,FP	2.5 mA		100 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54	Not Qualified	e3		70 °C		260	30	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	MATTE TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2190	2024-11-15 23:16:23	TSOP2, TSOP54,.46,32	compliant		EAR99	8542.32.00.02	14 weeks 1 day	4	TSOP2	54
对比	AS4C32M16D2A-25BCN	Alliance Memory Inc	查询价格			Yes	Active	536.8709 Mbit	16	32MX16	1.8 V	400 ps			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					1.9 V	1.7 V	CMOS	OTHER	R-PBGA-B84			3	85 °C				84	PLASTIC/EPOXY	TFBGA		RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	12.5 mm	8 mm	1689	2024-11-15 23:10:44	FBGA-84	compliant	Taiwan	EAR99	8542.32.00.28	16 weeks	4
对比	IS43R16320E-5TL-TR	Integrated Silicon Solution Inc	查询价格			Yes	Active	536.8709 Mbit	16	32MX16	2.5 V	700 ps			FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH			1	1	32000000	33.5544 M	SYNCHRONOUS		YES					2.7 V	2.3 V	CMOS	COMMERCIAL	R-PDSO-G66				70 °C		NOT SPECIFIED	NOT SPECIFIED	66	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	2024-06-03 16:39:07	TSOP2,	compliant	Mainland China, Taiwan	EAR99	8542.32.00.28	20 weeks	4.25
对比	IS42S16160J-7TL	Integrated Silicon Solution Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54				70 °C		NOT SPECIFIED	NOT SPECIFIED	54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES		GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2070	2024-11-15 23:06:33	TSOP2,	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	10 weeks	4
对比	IS42S16160J-6BLI	Integrated Silicon Solution Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH			1	1	16000000	16.7772 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	S-PBGA-B54		e1		85 °C	-40 °C	260		54	PLASTIC/EPOXY	TFBGA		SQUARE	GRID ARRAY, THIN PROFILE, FINE PITCH	YES	TIN SILVER COPPER	BALL	800 µm	BOTTOM	1.2 mm	8 mm	8 mm	2070	2024-11-15 23:06:40	TFBGA,	compliant	Mainland China, Taiwan	EAR99	8542.32.00.24	10 weeks	4
对比	MT46V64M8P-5B:J	Micron Technology Inc	查询价格			Yes	Active	536.8709 Mbit	8	64MX8	2.6 V	700 ps	200 MHz	8192	FOUR BANK PAGE BURST	DDR1 DRAM	AUTO/SELF REFRESH	COMMON	2,4,8	1	1	64000000	536.8709 M	SYNCHRONOUS	3-STATE	YES	2,4,8	5 mA		230 µA	2.7 V	2.5 V	CMOS	COMMERCIAL	R-PDSO-G66	Not Qualified	e3	3	70 °C		260	30	66	PLASTIC/EPOXY	TSOP2	TSSOP66,.46	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	Matte Tin (Sn)	GULL WING	650 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	2190	2024-11-15 23:17:56	TSSOP, TSSOP66,.46	compliant		EAR99	8542.32.00.28	6 weeks 1 day	4.25	TSOP	66
对比	AS4C16M16SA-6TCN	Alliance Memory Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C		260	40	54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:10:59	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.24	8 weeks	4
对比	AS4C4M16SA-6TCN	Alliance Memory Inc	查询价格			Yes	Active	67.1089 Mbit	16	4MX16	3.3 V	5.4 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	4000000	4.1943 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C				54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:10:37	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.02	8 weeks	4
对比	AS4C16M16SA-6TIN	Alliance Memory Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5 ns	166 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	25 mA		60 µA	3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C			54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:06:55	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.24	8 weeks	4
对比	AS4C8M16SA-6TIN	Alliance Memory Inc	查询价格			Yes	Active	134.2177 Mbit	16	8MX16	3.3 V	5 ns			FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH			1	1	8000000	8.3886 M	SYNCHRONOUS		YES					3.6 V	3 V	CMOS	INDUSTRIAL	R-PDSO-G54		e3	3	85 °C	-40 °C	260	40	54	PLASTIC/EPOXY	TSOP2		RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:10:23	0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.02	6 weeks	4
对比	AS4C16M16SA-7TCN	Alliance Memory Inc	查询价格			Yes	Active	268.4355 Mbit	16	16MX16	3.3 V	5.4 ns	143 MHz	8192	FOUR BANK PAGE BURST	SYNCHRONOUS DRAM	AUTO/SELF REFRESH	COMMON	1,2,4,8	1	1	16000000	16.7772 M	SYNCHRONOUS		YES	1,2,4,8,FP	20 mA	3 V	55 µA	3.6 V	3 V	CMOS	COMMERCIAL	R-PDSO-G54		e3	3	70 °C				54	PLASTIC/EPOXY	TSOP2	TSOP54,.46,32	RECTANGULAR	SMALL OUTLINE, THIN PROFILE	YES	TIN	GULL WING	800 µm	DUAL	1.2 mm	22.22 mm	10.16 mm	1689	2024-11-15 23:06:55	TSOP2-54	compliant	Taiwan	EAR99	8542.32.00.24	8 weeks	4
对比	MT40A512M16TB-062E:R	Micron Technology Inc	查询价格			Yes	Active	8.5899 Gbit	16	512MX16	1.2 V		1.6 GHz	8192	MULTI BANK PAGE BURST	DDR4 DRAM		COMMON	8	1	1	512000000	536.8709 M	SYNCHRONOUS		YES	8				1.26 V	1.14 V	CMOS		R-PBGA-B96				95 °C		260	30	96	PLASTIC/EPOXY	TFBGA	BGA96,9X16,32	RECTANGULAR	GRID ARRAY, THIN PROFILE, FINE PITCH	YES		BALL	800 µm	BOTTOM	1.2 mm	13 mm	7.5 mm	2190	2024-11-15 23:17:07		compliant				13 weeks 3 days	5.07

参数筛选

网络超时

登录

注册

完善资料