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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 零件包装代码 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | YTEOL | 包装说明 | 针数 | HTS代码 | Date Of Intro | |
对比 | BSS84 | onsemi | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 130 mA | 10 Ω | 12 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS84 | 2260 | 2024-11-16 00:13:45 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Philippines | EAR99 | 16 weeks | 6.5 | ||||||||||
对比 | BSS138 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 220 mA | 6 Ω | LOGIC LEVEL COMPATIBLE | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS138 | 2260 | 2024-11-16 00:13:09 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 16 weeks | 6.5 | SOT-23, 3 PIN | |||||||||
对比 | 2N7002 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2N7002 | 2260 | 2024-11-16 00:13:14 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 18 weeks | 6.5 | SOT-23, 3 PIN | |||||||||
对比 | BS170 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-226AA | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BS170 | 2260 | 2024-11-15 23:18:25 | TO-92-3 | 135AN | compliant | Mainland China | EAR99 | 2 days | 6.05 | TO-92, 3 PIN | 3 | ||||||||||||
对比 | BSS123 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 170 mA | 10 Ω | 3.4 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 360 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BSS123 | 2260 | 2024-11-15 23:11:49 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 22 weeks 4 days | 6.5 | SOT-23, 3 PIN | 8541.21.00.95 | 1996-09-01 | |||||||
对比 | 2N7000 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | LOGIC LEVEL COMPATIBLE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | 240 | 30 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Matte Tin (Sn) - annealed | THROUGH-HOLE | BOTTOM | 2N7000 | 2260 | 2024-11-15 23:17:36 | TO-92-3 | 135AN | compliant | Mainland China | EAR99 | 2 days | 6.05 | TO-226, 3 PIN | 3 | ||||||||
对比 | 2N7000-D26Z | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | 2N7000-D26Z | 2260 | 2024-09-30 13:27:26 | TO-92-3 LF | 135AR | compliant | Mainland China | EAR99 | 6.05 | ||||||||||||||
对比 | 2N7002-7-F | SPC Multicomp | 查询价格 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 mW | 200 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 4165152 | 2024-11-08 15:48:14 | unknown | EAR99 | 6.5 | SOT-23, 3 PIN | 8541.21.00.95 | ||||||||||||||||||||
对比 | BS170-D26Z | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BS170-D26Z | 2260 | 2024-09-30 13:27:26 | TO-92-3 LF | 135AR | compliant | Mainland China | EAR99 | 6.05 | TO-92, 3 PIN | ||||||||||||||
对比 | BS170-D27Z | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BS170-D27Z | 2260 | 2024-09-30 13:27:26 | TO-92-3 LF | 135AR | compliant | Mainland China | EAR99 | 6.05 | TO-92, 3 PIN | ||||||||||||||
对比 | BS170-D75Z | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 500 mA | 5 Ω | 10 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 830 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BS170-D75Z | 2260 | 2024-09-30 13:27:26 | TO-92-3 LF | 135AR | compliant | Mainland China | EAR99 | 6.05 | TO-92, 3 PIN | ||||||||||||||
对比 | 2N7002LT3G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002LT3G | 2260 | 2024-11-16 00:13:09 | SOT-23 (TO-236) 3 LEAD | 318 | compliant | Mainland China | EAR99 | 20 weeks | 6.5 | 3 | |||||||||
对比 | 2N7002ET1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 260 mA | 2.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002ET1G | 2260 | 2024-11-15 23:17:36 | SOT-23 (TO-236) 3 LEAD | 318 | compliant | Mainland China | EAR99 | 2 days | 6.5 | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | |||||||||
对比 | 2N7002LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2N7002LT1G | 2260 | 2024-11-15 23:17:46 | SOT-23 (TO-236) 3 LEAD | 318 | compliant | Mainland China | EAR99 | 53 weeks 4 days | 6.5 | 3 | 8541.21.00.95 | ||||||||
对比 | 2N7002K-T1-E3 | Vishay Intertechnologies | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 2 Ω | 2.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 2516 | 2024-11-15 23:11:28 | compliant | Mainland China | EAR99 | 7 weeks 4 days | 7 | SOT-23, 3 PIN | 8541.21.00.95 | |||||||||||
对比 | BSS138LT3G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | BSS138LT3G | 2260 | 2024-11-15 23:11:16 | SOT-23 (TO-236) 3 LEAD | 318 | compliant | Mainland China | EAR99 | 15 weeks 2 days | 6.5 | ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | ||||||||
对比 | SSM3K7002KFU,LF(T | Toshiba America Electronic Components | 查询价格 | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 3 | 60 V | 1 | 400 mA | 1.75 Ω | 1.3 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2484 | 2024-09-06 21:36:38 | unknown | EAR99 | 6.5 | , | |||||||||||||||||||||
对比 | 2N7002K_R1_00001 | PanJit Semiconductor | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 300 mA | 3 Ω | ULTRA LOW RESISTANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | 150 °C | -55 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | 2397849 | 2024-11-08 17:04:31 | compliant | Mainland China, Taiwan | EAR99 | 6.5 | ||||||||||||||||
对比 | 2V7002LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 115 mA | 7.5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | 2V7002LT1G | 2260 | 2024-11-15 23:16:31 | SOT-23 (TO-236) 3 LEAD | 318 | compliant | Mainland China | EAR99 | 22 weeks 4 days | 7 | 3 | |||||||||
对比 | BSS138-7-F | Diodes Incorporated | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 50 V | 1 | 200 mA | 3.5 Ω | HIGH RELIABILITY, LOW THRESHOLD | 8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 2024-11-15 23:11:16 | compliant | Mainland China, Taiwan | EAR99 | 16 weeks 3 days | 7 | 3 |