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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 最高频带 | 元件数量 | 最小功率增益 (Gp) | 最大漏极电流 (ID) | 其他特性 | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 功耗环境最大值 | 最大功率耗散 (Abs) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | YTEOL | HTS代码 | |
对比 | MMBFJ310LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFJ310LT1G | 2260 | 2024-11-15 23:17:36 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 2 days | 6.82 | |||||||||||
对比 | MMBFJ310LT3G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFJ310LT3G | 2260 | 2024-11-15 23:17:36 | SOT-23 (TO-236) 3 LEAD | 3 | 318 | compliant | Mainland China | EAR99 | 2 days | 6.82 | ||||||||||||
对比 | MMBFJ309LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFJ309LT1G | 2260 | 2024-11-15 23:17:51 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 17 weeks 4 days | 6.82 | |||||||||||
对比 | MMBFU310LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 25 V | ULTRA HIGH FREQUENCY BAND | 1 | 2.5 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBFU310LT1G | 2260 | 2024-11-15 23:07:25 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 14 weeks | 6.82 | |||||||||||
对比 | MMBF4416 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 18 dB | 0.9 pF | JUNCTION | DEPLETION MODE | 225 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBF4416 | 2260 | 2024-11-15 23:10:00 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | SOT-23, 3 PIN | 318 | compliant | Mainland China | EAR99 | 6.82 | ||||||||||||||
对比 | MMBF5484 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | 1 | 1 pF | JUNCTION | DEPLETION MODE | 225 mW | 225 mW | AMPLIFIER | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBF5484 | 2260 | 2024-11-15 23:10:00 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 6.82 | 8541.21.00.95 | |||||||||||||
对比 | MMBF5485 | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 1 pF | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | 350 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBF5485 | 2260 | 2024-11-15 23:07:25 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 17 weeks | 6.82 | |||||||||||||||
对比 | BF256B | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | JUNCTION | DEPLETION MODE | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | BF256B | 2260 | 2024-11-15 23:17:46 | TO-92-3 | 135AN | compliant | Mainland China | EAR99 | 16 weeks 4 days | 6.35 | |||||||||||||||||||
对比 | CPH6904-TL-E | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | JUNCTION | 700 mW | e6 | 1 | 150 °C | 260 | 30 | TIN BISMUTH | CPH6904-TL-E | 2260 | 2024-11-15 23:05:55 | CPH6 | 6 | 318BD | compliant | Mainland China | EAR99 | 16 weeks | 6.82 | |||||||||||||||||||||||||||||
对比 | SMMBFJ310LT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | JUNCTION | 225 mW | e3 | 1 | 150 °C | 260 | 30 | Matte Tin (Sn) - annealed | SMMBFJ310LT1G | 2260 | 2024-11-15 23:05:55 | SOT-23 (TO-236) 3 LEAD | 3 | 318 | compliant | Mainland China | EAR99 | 14 weeks | 6.82 | |||||||||||||||||||||||||||||
对比 | CE3514M4-C2 | California Eastern Laboratories (CEL) | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 3 V | X BAND | 1 | 10.5 dB | 15 mA | JUNCTION | DEPLETION MODE | AMPLIFIER | SILICON | R-PDSO-F4 | 125 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | FLAT | DUAL | 1822 | 2024-05-01 17:09:26 | SMALL OUTLINE, R-PDSO-F4 | compliant | EAR99 | 6 weeks 6 days | 6.82 | ||||||||||||||||||||||
对比 | NTE132 | NTE Electronics Inc | 查询价格 | Active | N-CHANNEL | NO | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 1.2 pF | JUNCTION | DEPLETION MODE | 310 mW | AMPLIFIER | SILICON | TO-106 | O-PBCY-W3 | Not Qualified | PLASTIC/EPOXY | ROUND | CYLINDRICAL | WIRE | BOTTOM | 2243 | 2024-05-01 17:01:55 | unknown | EAR99 | 6.35 | ||||||||||||||||||||||||||
对比 | NTE222 | NTE Electronics Inc | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE | 4 | 25 V | VERY HIGH FREQUENCY BAND | 1 | 14 dB | 50 mA | 0.03 pF | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | 330 mW | AMPLIFIER | SILICON | TO-72 | O-MBCY-W4 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | SOURCE | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 2243 | 2024-05-01 17:01:31 | unknown | EAR99 | 6.35 | |||||||||||||||||||
对比 | NTE452 | NTE Electronics Inc | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE | 4 | 30 V | VERY HIGH FREQUENCY BAND | 1 | 10 dB | 0.8 pF | JUNCTION | DEPLETION MODE | 300 mW | AMPLIFIER | SILICON | TO-72 | O-MBCY-W4 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 2243 | 2024-05-01 17:08:28 | CYLINDRICAL, O-MBCY-W4 | unknown | EAR99 | 6.35 | ||||||||||||||||||||
对比 | NTE221 | NTE Electronics Inc | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE | 4 | 20 V | VERY HIGH FREQUENCY BAND | 1 | 0.03 pF | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | 400 mW | AMPLIFIER | SILICON | TO-72 | O-MBCY-W4 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | SOURCE | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 2243 | 2024-05-01 17:03:20 | CYLINDRICAL, O-MBCY-W4 | unknown | EAR99 | 6.35 | ||||||||||||||||||||
对比 | CLF1G0060-10U | Ampleon | 查询价格 | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 2 | 150 V | C BAND | 1 | HIGH ELECTRON MOBILITY | DEPLETION MODE | AMPLIFIER | GALLIUM NITRIDE | R-CDFM-F2 | IEC-60134 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLANGE MOUNT | FLAT | DUAL | 216507667 | 2024-11-08 17:21:53 | FLANGE MOUNT, R-CDFM-F2 | unknown | EAR99 | |||||||||||||||||||||||||||
对比 | J211-D74Z | onsemi | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | JUNCTION | DEPLETION MODE | 350 mW | AMPLIFIER | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | J211-D74Z | 2260 | 2024-09-30 13:27:26 | TO-92 3L | 135AR | compliant | Mainland China | EAR99 | 6.35 | |||||||||||||||||||
对比 | 2SK1215IGFTL-E | Renesas Electronics Corporation | 查询价格 | Active | N-CHANNEL | YES | SINGLE | 3 | 20 V | VERY HIGH FREQUENCY BAND | 1 | 24 dB | 30 mA | METAL-OXIDE SEMICONDUCTOR | DEPLETION MODE | AMPLIFIER | SILICON | R-PDSO-G3 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 2SK1215IGFTL-E | 2354 | 2024-05-01 16:59:32 | SC-70 | SC-70, CMPAK-3 | 3 | compliant | EAR99 | 2 | ||||||||||||||||||||||
对比 | ATF-35143-BLKG | Broadcom Limited | 查询价格 | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 5.5 V | L BAND | 1 | 16.5 dB | LOW NOISE | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 300 mW | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 160 °C | 260 | 20 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1807 | 2024-05-01 17:02:23 | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 0 | 8541.21.00.75 | |||||||||||||||
对比 | ATF-58143-BLKG | Broadcom Limited | 查询价格 | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 5 V | C BAND | 1 | 15 dB | 100 mA | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 500 mW | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | Not Qualified | 1 | 150 °C | 260 | 20 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1807 | 2024-05-01 16:59:00 | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 0 | 8541.21.00.75 |