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射频小信号场效应晶体管: 9,151 个筛选结果
配置 (12)
最小漏源击穿电压 (44)
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最大漏极电流 (ID) (50)
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最高频带 (9)
制造商 (50)
元件数量 (3)
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端子数量 (17)
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极性/信道类型 (3)
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最小功率增益 (Gp) (50)
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Most Relevant Technical Compliance Operating Conditions Physical Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 最高频带 元件数量 最小功率增益 (Gp) 最大漏极电流 (ID) 其他特性 最大反馈电容 (Crss) FET 技术 工作模式 功耗环境最大值 最大功率耗散 (Abs) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
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端子位置
Source Content uid
mfrid
Modified On
零件包装代码
包装说明
针数
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是否符合REACH标准
Country Of Origin
ECCN代码
交付时间
YTEOL
HTS代码
对比
MMBFJ310LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBFJ310LT1G 2260 2024-11-15 23:17:36 SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318 compliant Mainland China EAR99 2 days 6.82
对比
MMBFJ310LT3G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBFJ310LT3G 2260 2024-11-15 23:17:36 SOT-23 (TO-236) 3 LEAD 3 318 compliant Mainland China EAR99 2 days 6.82
对比
MMBFJ309LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBFJ309LT1G 2260 2024-11-15 23:17:51 SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318 compliant Mainland China EAR99 17 weeks 4 days 6.82
对比
MMBFU310LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBFU310LT1G 2260 2024-11-15 23:07:25 SOT-23 (TO-236) 3 LEAD CASE 318-08, 3 PIN 3 318 compliant Mainland China EAR99 14 weeks 6.82
对比
MMBF4416
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 18 dB 0.9 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBF4416 2260 2024-11-15 23:10:00 SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P SOT-23, 3 PIN 318 compliant Mainland China EAR99 6.82
对比
MMBF5484
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 1 1 pF JUNCTION DEPLETION MODE 225 mW 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL MMBF5484 2260 2024-11-15 23:10:00 SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P 318 compliant Mainland China EAR99 6.82 8541.21.00.95
对比
MMBF5485
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 350 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL MMBF5485 2260 2024-11-15 23:07:25 SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P 318 compliant Mainland China EAR99 17 weeks 6.82
对比
BF256B
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM BF256B 2260 2024-11-15 23:17:46 TO-92-3 135AN compliant Mainland China EAR99 16 weeks 4 days 6.35
对比
CPH6904-TL-E
onsemi
查询价格
Yes Active N-CHANNEL YES JUNCTION 700 mW e6 1 150 °C 260 30 TIN BISMUTH CPH6904-TL-E 2260 2024-11-15 23:05:55 CPH6 6 318BD compliant Mainland China EAR99 16 weeks 6.82
对比
SMMBFJ310LT1G
onsemi
查询价格
Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C 260 30 Matte Tin (Sn) - annealed SMMBFJ310LT1G 2260 2024-11-15 23:05:55 SOT-23 (TO-236) 3 LEAD 3 318 compliant Mainland China EAR99 14 weeks 6.82
对比
CE3514M4-C2
California Eastern Laboratories (CEL)
查询价格
Yes Active N-CHANNEL YES SINGLE 4 3 V X BAND 1 10.5 dB 15 mA JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PDSO-F4 125 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL 1822 2024-05-01 17:09:26 SMALL OUTLINE, R-PDSO-F4 compliant EAR99 6 weeks 6 days 6.82
对比
NTE132
NTE Electronics Inc
查询价格
Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 1.2 pF JUNCTION DEPLETION MODE 310 mW AMPLIFIER SILICON TO-106 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM 2243 2024-05-01 17:01:55 unknown EAR99 6.35
对比
NTE222
NTE Electronics Inc
查询价格
Yes Active N-CHANNEL NO SINGLE 4 25 V VERY HIGH FREQUENCY BAND 1 14 dB 50 mA 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 330 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM 2243 2024-05-01 17:01:31 unknown EAR99 6.35
对比
NTE452
NTE Electronics Inc
查询价格
Yes Active N-CHANNEL NO SINGLE 4 30 V VERY HIGH FREQUENCY BAND 1 10 dB 0.8 pF JUNCTION DEPLETION MODE 300 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL WIRE BOTTOM 2243 2024-05-01 17:08:28 CYLINDRICAL, O-MBCY-W4 unknown EAR99 6.35
对比
NTE221
NTE Electronics Inc
查询价格
Yes Active N-CHANNEL NO SINGLE 4 20 V VERY HIGH FREQUENCY BAND 1 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 400 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM 2243 2024-05-01 17:03:20 CYLINDRICAL, O-MBCY-W4 unknown EAR99 6.35
对比
CLF1G0060-10U
Ampleon
查询价格
Contact Manufacturer N-CHANNEL YES SINGLE 2 150 V C BAND 1 HIGH ELECTRON MOBILITY DEPLETION MODE AMPLIFIER GALLIUM NITRIDE R-CDFM-F2 IEC-60134 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR FLANGE MOUNT FLAT DUAL 216507667 2024-11-08 17:21:53 FLANGE MOUNT, R-CDFM-F2 unknown EAR99
对比
J211-D74Z
onsemi
查询价格
Yes Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM J211-D74Z 2260 2024-09-30 13:27:26 TO-92 3L 135AR compliant Mainland China EAR99 6.35
对比
2SK1215IGFTL-E
Renesas Electronics Corporation
查询价格
Active N-CHANNEL YES SINGLE 3 20 V VERY HIGH FREQUENCY BAND 1 24 dB 30 mA METAL-OXIDE SEMICONDUCTOR DEPLETION MODE AMPLIFIER SILICON R-PDSO-G3 Not Qualified PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL 2SK1215IGFTL-E 2354 2024-05-01 16:59:32 SC-70 SC-70, CMPAK-3 3 compliant EAR99 2
对比
ATF-35143-BLKG
Broadcom Limited
查询价格
Yes Obsolete N-CHANNEL YES SINGLE 4 5.5 V L BAND 1 16.5 dB LOW NOISE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 300 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 160 °C 260 20 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 1807 2024-05-01 17:02:23 SMALL OUTLINE, R-PDSO-G4 compliant EAR99 0 8541.21.00.75
对比
ATF-58143-BLKG
Broadcom Limited
查询价格
Yes Obsolete N-CHANNEL YES SINGLE 4 5 V C BAND 1 15 dB 100 mA HIGH ELECTRON MOBILITY ENHANCEMENT MODE 500 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 20 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL 1807 2024-05-01 16:59:00 SMALL OUTLINE, R-PDSO-G4 compliant EAR99 0 8541.21.00.75
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