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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 集电极-发射极最大电压 | 最大集电极电流 (IC) | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最高频带 | 元件数量 | 最小直流电流增益 (hFE) | 标称过渡频率 (fT) | 其他特性 | 基于收集器的最大容量 | 功耗环境最大值 | 最大功率耗散 (Abs) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | Date Of Intro | |
对比 | MMBTH10LT1G | onsemi | 查询价格 | Yes | Active | 25 V | 25 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | 0.7 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBTH10LT1G | 2260 | 2024-11-15 23:11:16 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 8541.21.00.95 | 27 weeks 4 days | 4 | |||||||||
对比 | MMBTH10-7-F | Diodes Incorporated | 查询价格 | Yes | Yes | Active | 25 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | HIGH RELIABILITY | 0.7 pF | 300 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | 1926 | 2024-11-15 23:02:45 | ROHS COMPLIANT, PLASTIC PACKAGE-3 | 3 | compliant | EAR99 | 8 weeks | 4 | ||||||||||||
对比 | BF824W,135 | Nexperia | 查询价格 | Active | 30 V | 25 mA | PNP | YES | SINGLE | 3 | 1 | 25 | 390 MHz | 0.3 pF | 200 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101; IEC-134 | 1 | 150 °C | -65 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BF824W,135 | 229119436 | 2024-05-01 17:07:40 | SC-70 | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 | 3 | SOT323 | compliant | Malaysia | EAR99 | 4 | 1995-02-01 | |||||||||||
对比 | BFP420H6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 4.5 V | 35 mA | NPN | YES | SINGLE | 4 | X BAND | 1 | 25 GHz | HIGH RELIABILITY, LOW NOISE | 0.3 pF | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 1 | -65 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFP420H6327XTSA1 | 2065 | 2024-11-01 15:01:39 | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 4 | ||||||||||||||||||
对比 | MMBTH10-4LT1G | onsemi | 查询价格 | Yes | Active | 25 V | 25 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 120 | 800 MHz | 0.7 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBTH10-4LT1G | 2260 | 2024-11-15 23:18:17 | SOT-23 (TO-236) 3 LEAD | CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 8541.21.00.95 | 2 days | 4 | |||||||||
对比 | BFS20,215 | Nexperia | 查询价格 | Yes | Active | 20 V | 25 mA | NPN | YES | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 40 | 450 MHz | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BFS20,215 | 229119436 | 2024-07-10 20:47:42 | TO-236 | PLASTIC, SST, 3 PIN | 3 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 4 | 1997-09-01 | |||||||||||
对比 | BFR193E6327 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 70 | 8 GHz | 1 pF | 580 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BFR193E6327 | 2065 | 2024-05-01 17:07:33 | compliant | EAR99 | 4 | ||||||||||||||||
对比 | BF824,215 | Nexperia | 查询价格 | Yes | Active | 30 V | 25 mA | PNP | YES | SINGLE | 3 | 1 | 25 | 450 MHz | 0.3 pF | SILICON | TO-236AB | R-PDSO-G3 | e3 | Not Qualified | AEC-Q101 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | BF824,215 | 229119436 | 2024-07-10 18:55:55 | TO-236 | PLASTIC, SST, 3 PIN | 3 | SOT23 | compliant | Mainland China, Malaysia | EAR99 | 4 | 1997-09-01 | |||||||||||
对比 | BFR106E6327HTSA1 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 15 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 70 | 5 GHz | 1.5 pF | 700 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR106E6327HTSA1 | 2065 | 2024-11-15 23:14:56 | SMALL OUTLINE, R-PDSO-G3 | compliant | EAR99 | 18 weeks 6 days | 4 | ||||||||||||||||
对比 | MMBT918LT1G | onsemi | 查询价格 | Yes | Active | 15 V | 50 mA | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 20 | 600 MHz | 3 pF | 300 mW | SILICON | TO-236 | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | MMBT918LT1G | 2260 | 2024-11-15 23:07:25 | SOT-23 (TO-236) 3 LEAD | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN | 3 | 318 | compliant | Mainland China | EAR99 | 9 weeks | 4 | ||||||||||
对比 | BFR193WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 12 V | 80 mA | NPN | YES | SINGLE | 3 | L BAND | 1 | 8 GHz | LOW NOISE | 1 pF | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFR193WH6327XTSA1 | 2065 | 2024-11-08 15:56:32 | SMALL OUTLINE, R-PDSO-G3 | compliant | EAR99 | 4 | |||||||||||||||||||
对比 | BFP540ESDH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 4.5 V | 80 mA | NPN | YES | SINGLE | 4 | S BAND | 1 | 30 GHz | HIGH RELIABILITY, LOW NOISE | 0.24 pF | AMPLIFIER | SILICON | R-PDSO-G4 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFP540ESDH6327XTSA1 | 2065 | 2024-11-08 17:51:10 | SMALL OUTLINE, R-PDSO-G4 | compliant | EAR99 | 6 weeks | 4 | ||||||||||||||||||
对比 | BFR106E6327 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 15 V | 100 mA | NPN | YES | SINGLE | 3 | 1 | 40 | 5 GHz | 1.5 pF | 700 mW | AMPLIFIER | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 40 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BFR106E6327 | 2065 | 2024-05-01 17:06:30 | compliant | EAR99 | 4 | ||||||||||||||||
对比 | BFU520YX | NXP Semiconductors | 查询价格 | Yes | Active | 12 V | 30 mA | NPN | YES | SEPARATE, 2 ELEMENTS | 6 | L BAND | 2 | 60 | 10 GHz | LOW NOISE | 0.48 pF | 450 mW | AMPLIFIER | SILICON | R-PDSO-G6 | e3 | AEC-Q101; IEC-60134 | 1 | 150 °C | -40 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BFU520YX | 2245 | 2024-11-15 23:06:17 | TSSOP | SC-88, SOT-363, 6 PIN | 6 | SOT363 | compliant | Malaysia | EAR99 | 8541.21.00 | 13 weeks | 4 | |||||||
对比 | 2N2222 | SPC Multicomp | 查询价格 | Active | 30 V | 800 mA | NPN | NO | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 30 | 250 MHz | 8 pF | 500 mW | SWITCHING | SILICON | TO-18 | O-MBCY-W3 | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | 4165152 | 2024-07-10 19:55:58 | BCY | METAL CAN-3 | 3 | unknown | India | EAR99 | 4 | ||||||||||||||||||||
对比 | KST10MTF | onsemi | 查询价格 | Yes | Active | 25 V | NPN | YES | SINGLE | 3 | ULTRA HIGH FREQUENCY BAND | 1 | 60 | 650 MHz | 0.7 pF | 350 mW | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | KST10MTF | 2260 | 2024-11-15 23:07:25 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Mainland China | EAR99 | 10 weeks | 4 | |||||||||||||||
对比 | BFS483H6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 12 V | 65 mA | NPN | YES | SEPARATE, 2 ELEMENTS | 6 | L BAND | 2 | 8 GHz | LOW NOISE | 0.54 pF | AMPLIFIER | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | BFS483H6327XTSA1 | 2065 | 2024-11-15 23:05:40 | SMALL OUTLINE, R-PDSO-G6 | compliant | EAR99 | 4 weeks | 4 | ||||||||||||||||||
对比 | HFA3096BZ | Renesas Electronics Corporation | 查询价格 | Yes | Active | 8 V | 37 mA | NPN AND PNP | YES | SEPARATE, 5 ELEMENTS | 16 | ULTRA HIGH FREQUENCY BAND | 5 | 40 | 8 GHz | LOW NOISE | AMPLIFIER | SILICON | MS-012AC | R-PDSO-G16 | e3 | 3 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | HFA3096BZ | 2354 | 2024-11-15 23:15:11 | SOICN | SMALL OUTLINE, R-PDSO-G16 | 16 | M16.15 | compliant | Mainland China, Philippines | EAR99 | 16 weeks 4 days | 4 | ||||||||||||
对比 | MCH6001-TL-E | onsemi | 查询价格 | Yes | Active | 8 V | 150 mA | NPN | YES | SEPARATE, 2 ELEMENTS | 6 | ULTRA HIGH FREQUENCY BAND | 2 | 60 | 16 MHz | 600 mW | SILICON | R-PDSO-F6 | e6 | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN BISMUTH | FLAT | DUAL | MCH6001-TL-E | 2260 | 2024-11-15 23:05:25 | SC 88FL / MCPH6 | SC-70, SC-88, SOT-363, 6 PIN | 6 | 419AS | compliant | Mainland China | EAR99 | 28 weeks | 4 | |||||||||||||
对比 | MMBTH81 | onsemi | 查询价格 | Yes | Active | 20 V | 50 mA | PNP | YES | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 60 | 600 MHz | 0.85 pF | 350 mW | AMPLIFIER | SILICON | TO-236AA | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | MMBTH81 | 2260 | 2024-11-15 23:11:35 | SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P | 318 | compliant | Philippines | EAR99 | 18 weeks 4 days | 4 |