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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 极性/信道类型 | 表面贴装 | 配置 | 端子数量 | 最小漏源击穿电压 | 元件数量 | 最大漏极电流 (ID) | 最大漏源导通电阻 | 其他特性 | 雪崩能效等级(Eas) | 最大反馈电容 (Crss) | FET 技术 | 工作模式 | 最大功率耗散 (Abs) | 最大脉冲漏极电流 (IDM) | 晶体管应用 | 晶体管元件材料 | JEDEC-95代码 | JESD-30 代码 | JESD-609代码 | 认证状态 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | 交付时间 | Date Of Intro | YTEOL | 针数 | HTS代码 | |
对比 | NVMFS5C460NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 78 A | 7.2 mΩ | 107 mJ | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 396 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C460NLAFT1G | 2260 | 2024-11-15 23:10:59 | SO-8FL / DFN-5 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | 16 weeks | 2017-02-24 | 5.6 | |||||||||
对比 | NVMFS5C404NLWFAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 370 A | 1 mΩ | 907 mJ | 79.8 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C404NLWFAFT1G | 2260 | 2024-09-30 13:27:26 | DFNW5 4.90x5.90x1.00, 1.27P | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 77 weeks | 2017-02-24 | 5.6 | |||||||||
对比 | NVMFS5C426NAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 40 V | 1 | 235 A | 1.3 mΩ | 739 mJ | 59 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 900 A | SILICON | R-PDSO-F6 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C426NAFT1G | 2260 | 2024-11-15 23:17:41 | SO-8FL / DFN-5 | 488AA | not_compliant | Malaysia | EAR99 | 16 weeks | 2017-02-23 | 5.6 | ||||||||||
对比 | FQD13N06LTM | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 11 A | 145 mΩ | 90 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 44 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FQD13N06LTM | 2260 | 2024-11-15 23:07:25 | DPAK-3 / TO-252-3 | DPAK-3 | 369AS | not_compliant | Mainland China | EAR99 | 16 weeks | 5.4 | ||||||||||
对比 | IRF9530SPBF | Vishay Intertechnologies | 查询价格 | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 12 A | 300 mΩ | AVALANCHE RATED | 400 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 W | 48 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2024-11-15 23:06:33 | not_compliant | EAR99 | 13 weeks | 5.6 | ||||||||||||||||
对比 | IRF740STRLPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 400 V | 1 | 10 A | 550 mΩ | AVALANCHE RATED | 520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 40 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2024-11-15 23:06:17 | compliant | EAR99 | 8 weeks | 6.25 | 3 | |||||||||||||
对比 | IRF9540SPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 19 A | 200 mΩ | AVALANCHE RATED | 640 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 150 W | 72 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2024-11-15 23:16:31 | SMALL OUTLINE, R-PSSO-G2 | compliant | EAR99 | 16 weeks 5 days | 5.6 | 3 | |||||||||||
对比 | IRFZ44NSTRLPBF | Infineon Technologies AG | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 55 V | 1 | 49 A | 17.5 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 94 W | 160 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | SINGLE | IRFZ44NSTRLPBF | 2065 | 2024-11-15 23:17:36 | not_compliant | EAR99 | 16 weeks 3 days | 5.55 | ||||||||||||||
对比 | NVMFS5C426NLT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 40 V | 1 | 237 A | 1.8 mΩ | 453 mJ | 70 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 W | 1.48 kA | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C426NLT1G | 2260 | 2024-11-15 23:17:41 | SO-8FL / DFN-5 | SO-8FL, DFN5, 6 PIN | 488AA | not_compliant | Malaysia | EAR99 | 16 weeks | 5.6 | ||||||||||
对比 | IRFBF20STRLPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 900 V | 1 | 1.7 A | 8 Ω | AVALANCHE RATED | 180 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 54 W | 6.8 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2024-10-11 23:41:42 | LEAD FREE, D2PAK-3 | compliant | EAR99 | 18 weeks | 6.52 | 3 | ||||||||||||
对比 | IRFR9220PBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.6 A | 1.5 Ω | AVALANCHE RATED | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 14 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 10 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | 2516 | 2024-11-15 23:06:33 | TO-252AA | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 8 weeks | 5.95 | 3 | ||||||||||
对比 | NVMFS5C604NLAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C604NLAFT1G | 2260 | 2024-11-15 23:17:36 | DFN5 5x6, 1.27P (SO−8FL) | SO-8FL, DFN5, 6 PIN | 506EZ | not_compliant | Malaysia | EAR99 | 2 days | 2017-02-24 | 5.6 | |||||||||
对比 | FDB52N20TM | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 52 A | 49 mΩ | 2520 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 357 W | 208 A | SWITCHING | SILICON | TO-263 | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | FDB52N20TM | 2260 | 2024-11-16 00:13:09 | D2PAK-3 / TO-263-2 | D2PAK-3/2 | 418AJ | not_compliant | Mainland China | EAR99 | 22 weeks | 6.12 | |||||||||
对比 | NVMFS5C604NLWFAFT1G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 5 | 60 V | 1 | 287 A | 1.7 mΩ | 776 mJ | 40 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 900 A | SILICON | R-PDSO-F5 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | FLAT | DUAL | NVMFS5C604NLWFAFT1G | 2260 | 2024-09-30 13:27:26 | DFNW5 4.90x5.90x1.00, 1.27P | SO-8FL, DFN5, 6 PIN | 507BE | not_compliant | Malaysia | EAR99 | 71 weeks | 2017-02-24 | 5.6 | |||||||||
对比 | NTB25P06T4G | onsemi | 查询价格 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 27.5 A | 82 mΩ | 600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 W | 80 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | NTB25P06T4G | 2260 | 2024-11-16 00:08:20 | D2PAK 2 LEAD | D2PAK-3 | 418B-04 | not_compliant | Mainland China | EAR99 | 5.4 | 3 | 8541.29.00.95 | |||||||||
对比 | IRF520NPBF | Infineon Technologies AG | 查询价格 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 9.7 A | 200 mΩ | AVALANCHE RATED, HIGH RELIABILITY | 91 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 47 W | 38 A | SWITCHING | SILICON | TO-220AB | R-PSFM-T3 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin (Sn) | THROUGH-HOLE | SINGLE | IRF520NPBF | 2065 | 2024-11-15 23:12:58 | FLANGE MOUNT, R-PSFM-T3 | compliant | Mainland China | EAR99 | 16 weeks 3 days | 5.05 | ||||||||||||||
对比 | IRFR9220TRPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 3.6 A | 1.5 Ω | AVALANCHE RATED | 310 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 14 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2024-11-15 23:06:17 | TO-252AA | not_compliant | EAR99 | 8 weeks | 5.95 | 3 | |||||||||||
对比 | IRFR420TRPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 2.4 A | 3 Ω | AVALANCHE RATED | 400 mJ | 37 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 W | 8 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | -55 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2024-11-15 23:05:40 | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 13 weeks | 6.3 | ||||||||||
对比 | IRF840SPBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 500 V | 1 | 8 A | 850 mΩ | AVALANCHE RATED | 510 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 32 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | 2516 | 2024-09-13 23:05:12 | D2PAK | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | 20 weeks | 6.25 | 3 | ||||||||||
对比 | IRFR210PBF | Vishay Intertechnologies | 查询价格 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 2.6 A | 1.5 Ω | AVALANCHE RATED | 130 mJ | 15 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 25 W | 10 A | SWITCHING | SILICON | TO-252AA | R-PSSO-G2 | e3 | Not Qualified | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | SINGLE | 2516 | 2024-11-15 23:06:33 | TO-252AA | SMALL OUTLINE, R-PSSO-G2 | not_compliant | Mainland China | EAR99 | 13 weeks | 5.95 | 3 |