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功率场效应晶体管: 178,742 个筛选结果
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配置 (50)
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最小漏源击穿电压 (50)
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最大漏极电流 (ID) (50)
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最大漏源导通电阻 (50)
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制造商 (50)
元件数量 (9)
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端子数量 (40)
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极性/信道类型 (5)
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Most Relevant Technical Compliance Operating Conditions Physical Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 极性/信道类型 表面贴装
配置 端子数量 最小漏源击穿电压 元件数量 最大漏极电流 (ID) 最大漏源导通电阻 其他特性 雪崩能效等级(Eas) 最大反馈电容 (Crss) FET 技术 工作模式 最大功率耗散 (Abs) 最大脉冲漏极电流 (IDM) 晶体管应用
晶体管元件材料
JEDEC-95代码 JESD-30 代码 JESD-609代码 认证状态 参考标准
湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 处于峰值回流温度下的最长时间
外壳连接 封装主体材料 封装形状 封装形式 端子面层
端子形式
端子位置
Source Content uid
mfrid
Modified On
零件包装代码
包装说明
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
交付时间
Date Of Intro
YTEOL
针数
HTS代码
对比
NVMFS5C460NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 78 A 7.2 mΩ 107 mJ 25 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 396 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C460NLAFT1G 2260 2024-11-15 23:10:59 SO-8FL / DFN-5 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 16 weeks 2017-02-24 5.6
对比
NVMFS5C404NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 370 A 1 mΩ 907 mJ 79.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C404NLWFAFT1G 2260 2024-09-30 13:27:26 DFNW5 4.90x5.90x1.00, 1.27P SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 77 weeks 2017-02-24 5.6
对比
NVMFS5C426NAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 40 V 1 235 A 1.3 mΩ 739 mJ 59 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 900 A SILICON R-PDSO-F6 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C426NAFT1G 2260 2024-11-15 23:17:41 SO-8FL / DFN-5 488AA not_compliant Malaysia EAR99 16 weeks 2017-02-23 5.6
对比
FQD13N06LTM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 11 A 145 mΩ 90 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 28 W 44 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FQD13N06LTM 2260 2024-11-15 23:07:25 DPAK-3 / TO-252-3 DPAK-3 369AS not_compliant Mainland China EAR99 16 weeks 5.4
对比
IRF9530SPBF
Vishay Intertechnologies
查询价格
Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 12 A 300 mΩ AVALANCHE RATED 400 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 88 W 48 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2024-11-15 23:06:33 not_compliant EAR99 13 weeks 5.6
对比
IRF740STRLPBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 400 V 1 10 A 550 mΩ AVALANCHE RATED 520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 40 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2024-11-15 23:06:17 compliant EAR99 8 weeks 6.25 3
对比
IRF9540SPBF
Vishay Intertechnologies
查询价格
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 100 V 1 19 A 200 mΩ AVALANCHE RATED 640 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 72 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2024-11-15 23:16:31 SMALL OUTLINE, R-PSSO-G2 compliant EAR99 16 weeks 5 days 5.6 3
对比
IRFZ44NSTRLPBF
Infineon Technologies AG
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 55 V 1 49 A 17.5 mΩ AVALANCHE RATED, HIGH RELIABILITY 150 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 94 W 160 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING SINGLE IRFZ44NSTRLPBF 2065 2024-11-15 23:17:36 not_compliant EAR99 16 weeks 3 days 5.55
对比
NVMFS5C426NLT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 40 V 1 237 A 1.8 mΩ 453 mJ 70 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 128 W 1.48 kA SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C426NLT1G 2260 2024-11-15 23:17:41 SO-8FL / DFN-5 SO-8FL, DFN5, 6 PIN 488AA not_compliant Malaysia EAR99 16 weeks 5.6
对比
IRFBF20STRLPBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 900 V 1 1.7 A 8 Ω AVALANCHE RATED 180 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 54 W 6.8 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2024-10-11 23:41:42 LEAD FREE, D2PAK-3 compliant EAR99 18 weeks 6.52 3
对比
IRFR9220PBF
Vishay Intertechnologies
查询价格
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.6 A 1.5 Ω AVALANCHE RATED 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 14 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 10 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE 2516 2024-11-15 23:06:33 TO-252AA SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 8 weeks 5.95 3
对比
NVMFS5C604NLAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 287 A 1.7 mΩ 776 mJ 40 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C604NLAFT1G 2260 2024-11-15 23:17:36 DFN5 5x6, 1.27P (SO−8FL) SO-8FL, DFN5, 6 PIN 506EZ not_compliant Malaysia EAR99 2 days 2017-02-24 5.6
对比
FDB52N20TM
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 52 A 49 mΩ 2520 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 357 W 208 A SWITCHING SILICON TO-263 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 245 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE FDB52N20TM 2260 2024-11-16 00:13:09 D2PAK-3 / TO-263-2 D2PAK-3/2 418AJ not_compliant Mainland China EAR99 22 weeks 6.12
对比
NVMFS5C604NLWFAFT1G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 5 60 V 1 287 A 1.7 mΩ 776 mJ 40 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 900 A SILICON R-PDSO-F5 e3 AEC-Q101 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed FLAT DUAL NVMFS5C604NLWFAFT1G 2260 2024-09-30 13:27:26 DFNW5 4.90x5.90x1.00, 1.27P SO-8FL, DFN5, 6 PIN 507BE not_compliant Malaysia EAR99 71 weeks 2017-02-24 5.6
对比
NTB25P06T4G
onsemi
查询价格
Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 27.5 A 82 mΩ 600 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 100 W 80 A SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE NTB25P06T4G 2260 2024-11-16 00:08:20 D2PAK 2 LEAD D2PAK-3 418B-04 not_compliant Mainland China EAR99 5.4 3 8541.29.00.95
对比
IRF520NPBF
Infineon Technologies AG
查询价格
Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 9.7 A 200 mΩ AVALANCHE RATED, HIGH RELIABILITY 91 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 47 W 38 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin (Sn) THROUGH-HOLE SINGLE IRF520NPBF 2065 2024-11-15 23:12:58 FLANGE MOUNT, R-PSFM-T3 compliant Mainland China EAR99 16 weeks 3 days 5.05
对比
IRFR9220TRPBF
Vishay Intertechnologies
查询价格
Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 3.6 A 1.5 Ω AVALANCHE RATED 310 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 14 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2024-11-15 23:06:17 TO-252AA not_compliant EAR99 8 weeks 5.95 3
对比
IRFR420TRPBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 2.4 A 3 Ω AVALANCHE RATED 400 mJ 37 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 42 W 8 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2024-11-15 23:05:40 SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 13 weeks 6.3
对比
IRF840SPBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 500 V 1 8 A 850 mΩ AVALANCHE RATED 510 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 125 W 32 A SWITCHING SILICON TO-263AB R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE 2516 2024-09-13 23:05:12 D2PAK SMALL OUTLINE, R-PSSO-G2 not_compliant EAR99 20 weeks 6.25 3
对比
IRFR210PBF
Vishay Intertechnologies
查询价格
Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 200 V 1 2.6 A 1.5 Ω AVALANCHE RATED 130 mJ 15 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 10 A SWITCHING SILICON TO-252AA R-PSSO-G2 e3 Not Qualified 150 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE 2516 2024-11-15 23:06:33 TO-252AA SMALL OUTLINE, R-PSSO-G2 not_compliant Mainland China EAR99 13 weeks 5.95 3
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