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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 可输出 | 并行/串行 | 最大待机电流 | 最小待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 零件包装代码 | 针数 | 制造商包装代码 | 是否符合REACH标准 | ECCN代码 | HTS代码 | 交付时间 | YTEOL | 包装说明 | Country Of Origin | |
对比 | 71V416S10PHG8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3 V | 200 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 71V416S10PHG8 | 2354 | 2024-11-15 23:02:11 | TSOP | 44 | PHG44 | compliant | NLR | 8542320041 | 18 weeks | 4.9 | |||||||||||
对比 | 71V416S15PHGI8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3 V | 170 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 71V416S15PHGI8 | 2354 | 2024-11-15 23:02:11 | TSOP | 44 | PHG44 | compliant | NLR | 8542320041 | 18 weeks | 4 | ||||||||||
对比 | 71024S15TYGI8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 15 ns | STANDARD SRAM | COMMON | 1 | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 10 mA | 4.5 V | 155 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | SOJ | SOJ32,.34 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | J BEND | 1.27 mm | DUAL | 3.76 mm | 20.96 mm | 7.62 mm | 71024S15TYGI8 | 2354 | 2024-11-15 23:02:11 | SOJ | 32 | PJG32 | compliant | NLR | 8542320041 | 18 weeks | 4 | ||||||||
对比 | CY62128ELL-45SXI | Infineon Technologies AG | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 45 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 µA | 2 V | 16 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 32 | PLASTIC/EPOXY | SOP | SOP32,.56 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 2.997 mm | 20.4465 mm | 11.303 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 4 | 0.450 INCH, LEAD FREE, SOIC-32 | Mainland China, Taiwan | |||||||||||||||
对比 | CY62128ELL-45ZXI | Infineon Technologies AG | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 45 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 µA | 2 V | 16 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDSO-G32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 20 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 4 | 8 X 20 MM, LEAD FREE, TSOP1-32 | Philippines, Taiwan | |||||||||||||||
对比 | GS880Z36CGT-200 | GSI Technology | 查询价格 | Yes | Yes | Active | 9.4372 Mbit | 36 | 256KX36 | 2.5 V | 6.5 ns | ZBT SRAM | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY | 1 | 256000 | 262.144 k | SYNCHRONOUS | PARALLEL | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 100 | PLASTIC/EPOXY | LQFP | RECTANGULAR | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 650 µm | QUAD | 1.6 mm | 20 mm | 14 mm | 2017 | 2024-11-15 23:09:14 | QFP | 100 | compliant | 3A991.B.2.B | 8542.32.00.41 | 24 weeks | 5.2 | LQFP, | Taiwan | |||||||||||||||||
对比 | 23LC1024T-I/SN | Microchip Technology Inc | 查询价格 | Yes | Active | 1.0486 Mbit | 8 | 128KX8 | 5 V | 20 MHz | STANDARD SRAM | COMMON/SEPARATE | 1 | 1 | 128000 | 131.072 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 23LC1024T-I/SN | 2188 | 2024-11-16 00:02:26 | compliant | EAR99 | 8542.32.00.51 | 15.2 | SOIC-8 | Thailand | ||||||||||
对比 | CY62148EV30LL-45BVXI | Infineon Technologies AG | 查询价格 | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 7 µA | 1.5 V | 20 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PBGA-B36 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 20 | 36 | PLASTIC/EPOXY | VFBGA | BGA36,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1 mm | 8 mm | 6 mm | 2065 | 2024-11-15 23:19:00 | compliant | 2 days | 4 | VFBGA-36 | ||||||||||||||
对比 | 23K256-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 23K256-I/SN | 2188 | 2024-11-15 23:04:01 | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | 4 weeks | 9 | Thailand | ||||||||
对比 | 70V28L15PFG | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 1.0486 Mbit | 16 | 64KX16 | 3.3 V | 15 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 3 mA | 3 V | 235 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PQFP-G100 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LFQFP | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | YES | MATTE TIN | GULL WING | 500 µm | QUAD | 1.6 mm | 14 mm | 14 mm | 70V28L15PFG | 2354 | 2024-11-15 23:02:25 | TQFP | 100 | PNG100 | compliant | NLR | 8542320041 | 18 weeks | 4.8 | ||||||||||
对比 | 71V424S15PHGI8 | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 4.1943 Mbit | 8 | 512KX8 | 3.3 V | 15 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 20 mA | 3 V | 160 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | DUAL | 1.2 mm | 18.41 mm | 10.16 mm | 71V424S15PHGI8 | 2354 | 2024-11-15 23:02:11 | TSOP | 44 | PHG44 | compliant | NLR | 8542320041 | 18 weeks | 4 | ||||||||||
对比 | 23K256T-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 262.144 kbit | 8 | 32KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 32000 | 32.768 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 23K256T-I/SN | 2188 | 2024-11-15 23:04:01 | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | 4 weeks | 9 | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SOIC-8 | Thailand | |||||||
对比 | CY62136FV30LL-45ZSXI | Infineon Technologies AG | 查询价格 | Yes | Active | 2.0972 Mbit | 16 | 128KX16 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 µA | 1.5 V | 25 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | 2024-11-08 15:56:23 | compliant | 4 weeks | 4 | LEAD FREE, TSOP2-44 | ||||||||||||||||
对比 | 23K640-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 8000 | 8.192 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 4 µA | 2.7 V | 10 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 23K640-I/SN | 2188 | 2024-11-15 23:04:01 | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | 4 weeks | 9 | 3.90 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, NSOIC-8 | Thailand | ||||||
对比 | CY62167EV30LL-45BVXI | Infineon Technologies AG | 查询价格 | Yes | Active | 16.7772 Mbit | 16 | 1MX16 | 3 V | 45 ns | STANDARD SRAM | 8 | COMMON | 1 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 1.5 V | 30 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e1 | 3 | 85 °C | -40 °C | 260 | 30 | 48 | PLASTIC/EPOXY | VFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 750 µm | BOTTOM | 1 mm | 8 mm | 6 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 4 | VFBGA-48 | Taiwan, Thailand | |||||||||||||||
对比 | 71321LA25PFGI | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 25 ns | MULTI-PORT SRAM | AUTOMATIC POWER DOWN | COMMON | 1 | 2 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 4 mA | 2 V | 220 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQFP-G64 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 64 | PLASTIC/EPOXY | LQFP | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | YES | MATTE TIN | GULL WING | 800 µm | QUAD | 1.6 mm | 14 mm | 14 mm | 71321LA25PFGI | 2354 | 2024-11-15 23:02:25 | TQFP | 64 | PNG64 | compliant | NLR | 8542320041 | 18 weeks | 4 | 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64 | |||||||
对比 | 23LC512-I/ST | Microchip Technology Inc | 查询价格 | Yes | Active | 524.288 kbit | 8 | 64KX8 | 5 V | 20 MHz | STANDARD SRAM | SEPARATE | 1 | 1 | 64000 | 65.536 k | SYNCHRONOUS | 3-STATE | NO | SERIAL | 10 µA | 2.5 V | 10 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | 23LC512-I/ST | 2188 | 2024-11-15 23:05:47 | compliant | EAR99 | 8542.32.00.51 | 4 weeks | 15.38 | Philippines, Thailand | ||||||||||
对比 | CY7C1041GN30-10ZSXI | Infineon Technologies AG | 查询价格 | Yes | Active | 4.1943 Mbit | 16 | 256KX16 | 3 V | 10 ns | STANDARD SRAM | COMMON | 1 | 1 | 256000 | 262.144 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 8 mA | 1 V | 45 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Matte Tin (Sn) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | 2024-11-15 23:18:54 | compliant | 2 days | 4.9 | TSOP2-44 | Mainland China, Philippines, Taiwan | ||||||||||||||
对比 | CY62157EV30LL-45ZSXI | Infineon Technologies AG | 查询价格 | Yes | Active | 8.3886 Mbit | 16 | 512KX16 | 3 V | 45 ns | STANDARD SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 8 µA | 1.5 V | 25 µA | 3.6 V | 2.2 V | CMOS | INDUSTRIAL | R-PDSO-G44 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 20 | 44 | PLASTIC/EPOXY | TSOP2 | TSOP44,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 800 µm | DUAL | 1.194 mm | 18.415 mm | 10.16 mm | 2065 | 2024-11-15 23:19:00 | compliant | 2 days | 4 | TSOP2-44 | Mainland China, Philippines, Taiwan | ||||||||||||||
对比 | 7025L20PFGI | Renesas Electronics Corporation | 查询价格 | Yes | Yes | Active | 131.072 kbit | 16 | 8KX16 | 5 V | 20 ns | MULTI-PORT SRAM | INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE; BATTERY BACKUP | COMMON | 1 | 2 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 4 mA | 240 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | S-PQFP-G100 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 100 | PLASTIC/EPOXY | LFQFP | QFP100,.63SQ,20 | SQUARE | FLATPACK, LOW PROFILE, FINE PITCH | YES | MATTE TIN | GULL WING | 500 µm | QUAD | 1.4 mm | 14 mm | 14 mm | 7025L20PFGI | 2354 | 2024-11-15 23:02:25 | TQFP | 100 | PNG100 | compliant | NLR | 8542320041 | 18 weeks | 4.5 | Philippines, Taiwan |