Thu Nov 21 2024 16:30:46 GMT+0800 (China Standard Time)

随身查
mini app
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手机随时查器件
EPROM: 21,819 个筛选结果
最长访问时间 (50)
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最大时钟频率 (fCLK) (8)
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制造商 (50)
内存密度 (23)
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内存宽度 (5)
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组织 (45)
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
对比 制造商型号 制造商 综合价格
风险等级 是否无铅 是否Rohs认证
生命周期 内存密度 内存宽度 组织 标称供电电压 (Vsup)
最长访问时间 最大时钟频率 (fCLK) 内存集成电路类型 其他特性 备用内存宽度 数据保留时间-最小值 耐久性 I/O 类型 功能数量 端口数量 字数代码 字数 工作模式 输出特性 并行/串行 编程电压
反向引出线
串行总线类型
最大待机电流
最大压摆率
最大供电电压 (Vsup)
最小供电电压 (Vsup)
技术 温度等级
类型
最长写入周期时间 (tWC)
写保护
JESD-30 代码 认证状态
JESD-609代码 湿度敏感等级 最高工作温度 最低工作温度 峰值回流温度(摄氏度) 筛选级别
处于峰值回流温度下的最长时间
端子数量 封装主体材料 封装代码 封装等效代码 封装形状 封装形式 表面贴装
端子面层
端子形式
端子节距
端子位置
座面最大高度
长度 宽度
Source Content uid
mfrid
Modified On
零件包装代码
针数
制造商包装代码
是否符合REACH标准
Country Of Origin
ECCN代码
HTS代码
YTEOL
包装说明
交付时间
对比
CAT24C128WI-GT3
onsemi
查询价格
Yes Active 131.072 kbit 8 16KX8 3.3 V 1 MHz EEPROM 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more 1 100 1000000 Write/Erase Cycles 1 16000 16.384 k SYNCHRONOUS OPEN-DRAIN SERIAL 3.3 V I2C 2 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm CAT24C128WI-GT3 2260 2024-09-30 13:27:26 SOIC 8, 150 mils 8 751BD compliant Thailand EAR99 8542.32.00.51 6.3
对比
AT93C46DN-SH-B
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 8 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm AT93C46DN-SH-B 2188 2024-11-15 23:07:36 compliant Mainland China, Thailand 3A991.A.2 8542.31.00.01 15.49 SOIC-8 4 weeks
对比
AT93C46EN-SH-T
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 3 85 °C -40 °C 260 40 8 PLASTIC/EPOXY SOP SOP8,.23 RECTANGULAR SMALL OUTLINE YES NICKEL PALLADIUM GOLD GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm AT93C46EN-SH-T 2188 2024-11-15 23:04:49 compliant Mainland China, Thailand 3A991.A.2 8542.31.00.01 15.48 SOIC-8
对比
AT93C46E-TH-B
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES NICKEL PALLADIUM GOLD GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm AT93C46E-TH-B 2188 2024-11-15 23:11:16 compliant Thailand 3A991.A.2 8542.31.00.01 15 TSSOP-8 5 weeks 4 days
对比
AT93C46E-PU
Microchip Technology Inc
查询价格
Yes Yes Active 1.024 kbit 16 64X16 5 V 2 MHz EEPROM ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN 100 1000000 Write/Erase Cycles SEPARATE 1 1 64 64 words SYNCHRONOUS 3-STATE SERIAL 5 V NO 3-WIRE 15 µA 2 µA 5.5 V 4.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDIP-T8 Not Qualified e3 85 °C -40 °C 8 PLASTIC/EPOXY DIP DIP8,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 5.334 mm 9.271 mm 7.62 mm AT93C46E-PU 2188 2024-11-15 23:03:19 compliant Thailand 3A991.A.2 8542.31.00.01 15 DIP-8 6 weeks
对比
CAT24C128YI-GT3
onsemi
查询价格
Yes Active 131.072 kbit 8 16KX8 3.3 V 1 MHz EEPROM 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more 1 100 1000000 Write/Erase Cycles 1 16000 16.384 k SYNCHRONOUS OPEN-DRAIN SERIAL 3.3 V I2C 2 µA 3 µA 5.5 V 2.5 V CMOS INDUSTRIAL 5 ms HARDWARE R-PDSO-G8 Not Qualified e4 1 85 °C -40 °C 260 30 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Nickel/Palladium/Gold (Ni/Pd/Au) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm CAT24C128YI-GT3 2260 2024-11-15 23:09:14 TSSOP8, 4.4x3 8 948AL compliant Thailand EAR99 8542.32.00.51 6.3 21 weeks
对比
MX25L25645GZ2I-08G
Macronix International Co Ltd
查询价格
Yes Active 268.4355 Mbit 8 32MX8 3 V 120 MHz FLASH 20 100000 Write/Erase Cycles 1 32000000 33.5544 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 20 µA 25 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-XDSO-N8 e3 85 °C -40 °C 8 UNSPECIFIED HVSON SOLCC8,.3 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES TIN NO LEAD 1.27 mm DUAL 800 µm 8 mm 6 mm 4307504 2024-11-15 23:15:17 compliant Taiwan EAR99 8542.32.00.51 5 WSON-8 10 weeks
对比
MX25L25645GZNI-08G
Macronix International Co Ltd
查询价格
Yes Active 268.4355 Mbit 8 32MX8 3 V 120 MHz FLASH 20 100000 Write/Erase Cycles 1 32000000 33.5544 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 20 µA 25 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-XDSO-N8 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 UNSPECIFIED HVSON SOLCC8,.25 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES NO LEAD 1.27 mm DUAL 800 µm 6 mm 5 mm 4307504 2024-11-15 23:15:17 unknown Taiwan EAR99 8542.32.00.51 6.2 WSON-8 10 weeks
对比
MX25L25645GM2I-08G
Macronix International Co Ltd
查询价格
Yes Active 268.4355 Mbit 8 32MX8 3 V 120 MHz FLASH 20 100000 Write/Erase Cycles 1 32000000 33.5544 M SYNCHRONOUS 3-STATE SERIAL 3 V SPI 20 µA 25 µA 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE HARDWARE/SOFTWARE R-PDSO-G8 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY SOP SOP8,.3 RECTANGULAR SMALL OUTLINE YES GULL WING 1.27 mm DUAL 2.16 mm 5.28 mm 5.23 mm 4307504 2024-11-15 23:15:17 unknown Taiwan EAR99 8542.32.00.51 8 SOP-8 10 weeks
对比
MD27C256-25/B
Rochester Electronics LLC
查询价格
No Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 30 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-J32 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED 32 CERAMIC, METAL-SEALED COFIRED QCCJ RECTANGULAR CHIP CARRIER YES J BEND 1.27 mm QUAD 4.2418 mm 15.04 mm 11.557 mm 2178096 2024-10-11 23:05:15 unknown 3A001.A.2.C 8542.32.00.61 3.75 CERAMIC, JLCC-32 4 weeks
对比
5962-8606312QYX
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified e0 125 °C -55 °C MIL-PRF-38535 Class Q 32 CERAMIC, METAL-SEALED COFIRED QCCN RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD QUAD 1937079 2024-07-10 18:47:44 QFJ 32 compliant USA 3A001.A.2.C 8542.32.00.61 4.6 CERAMIC, LCC-32
对比
QP27C256-200/QYA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 200 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL 1937079 2024-04-02 15:50:08 DIP 28 compliant 3A001.A.2.C 8542.32.00.61 3.75 HERMETIC SEALED, CERAMIC, DIP-28
对比
QP27C256-200/YA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 200 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL 1937079 2024-11-16 00:13:19 DIP 28 compliant 3A001.A.2.C 8542.32.00.61 3.75 HERMETIC SEALED, CERAMIC, DIP-28
对比
QP27C256L-200/YA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 200 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL 1937079 2024-05-23 05:57:55 DIP 28 compliant 3A001.A.2.C 8542.32.00.61 3.75 HERMETIC SEALED, CERAMIC, DIP-28
对比
QP27C256-200/XA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 200 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL 1937079 2024-11-16 00:13:25 DIP 28 compliant 3A001.A.2.C 8542.32.00.61 3.75 HERMETIC SEALED, CERAMIC, DIP-28
对比
QP27C256L-200/XA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 200 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP RECTANGULAR IN-LINE NO THROUGH-HOLE DUAL 1937079 2024-04-02 15:48:18 DIP 28 compliant 3A001.A.2.C 8542.32.00.61 3.75 HERMETIC SEALED, CERAMIC, DIP-28
对比
QP27C256L-250/ZA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 60 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 32 CERAMIC, METAL-SEALED COFIRED QCCN RECTANGULAR CHIP CARRIER YES NO LEAD QUAD 1937079 2024-04-02 15:27:56 QFJ 32 compliant 3A001.A.2.C 8542.32.00.61 3.75 CERAMIC, LCC-32
对比
QP27C256L-250/YC
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 60 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 32 CERAMIC, METAL-SEALED COFIRED QCCN RECTANGULAR CHIP CARRIER YES NO LEAD QUAD 1937079 2024-04-02 15:50:42 QFJ 32 compliant 3A001.A.2.C 8542.32.00.61 3.75 CERAMIC, LCC-32
对比
QP27C256-300/QXA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 60 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 32 CERAMIC, METAL-SEALED COFIRED QCCN RECTANGULAR CHIP CARRIER YES NO LEAD QUAD 1937079 2024-05-23 08:18:41 QFJ 32 compliant 3A001.A.2.C 8542.32.00.61 3.75 CERAMIC, LCC-32
对比
QP27C256L-300/UA
Teledyne e2v
查询价格
Active 262.144 kbit 8 32KX8 5 V 250 ns UVPROM 1 32000 32.768 k ASYNCHRONOUS PARALLEL 25 µA 5.5 V 4.5 V CMOS MILITARY R-XQCC-N32 Not Qualified 125 °C -55 °C MIL-STD-883 Class B 32 UNSPECIFIED QCCN RECTANGULAR CHIP CARRIER YES NO LEAD QUAD 1937079 2024-05-23 06:50:29 QFJ 32 compliant 3A001.A.2.C 8542.32.00.61 3.75 JLCC-32
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