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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最长访问时间 | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 数据保留时间-最小值 | 耐久性 | I/O 类型 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 | 编程电压 | 反向引出线 | 串行总线类型 | 最大待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | 类型 | 最长写入周期时间 (tWC) | 写保护 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 零件包装代码 | 针数 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | YTEOL | 包装说明 | 交付时间 | |
对比 | CAT24C128WI-GT3 | onsemi | 查询价格 | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT24C128WI-GT3 | 2260 | 2024-09-30 13:27:26 | SOIC 8, 150 mils | 8 | 751BD | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.3 | |||||||||||
对比 | AT93C46DN-SH-B | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 8 | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | AT93C46DN-SH-B | 2188 | 2024-11-15 23:07:36 | compliant | Mainland China, Thailand | 3A991.A.2 | 8542.31.00.01 | 15.49 | SOIC-8 | 4 weeks | ||||||||
对比 | AT93C46EN-SH-T | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | NICKEL PALLADIUM GOLD | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | AT93C46EN-SH-T | 2188 | 2024-11-15 23:04:49 | compliant | Mainland China, Thailand | 3A991.A.2 | 8542.31.00.01 | 15.48 | SOIC-8 | ||||||||||
对比 | AT93C46E-TH-B | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | NICKEL PALLADIUM GOLD | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | AT93C46E-TH-B | 2188 | 2024-11-15 23:11:16 | compliant | Thailand | 3A991.A.2 | 8542.31.00.01 | 15 | TSSOP-8 | 5 weeks 4 days | |||||||||
对比 | AT93C46E-PU | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 5 V | 2 MHz | EEPROM | ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN | 100 | 1000000 Write/Erase Cycles | SEPARATE | 1 | 1 | 64 | 64 words | SYNCHRONOUS | 3-STATE | SERIAL | 5 V | NO | 3-WIRE | 15 µA | 2 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.271 mm | 7.62 mm | AT93C46E-PU | 2188 | 2024-11-15 23:03:19 | compliant | Thailand | 3A991.A.2 | 8542.31.00.01 | 15 | DIP-8 | 6 weeks | ||||||||||||
对比 | CAT24C128YI-GT3 | onsemi | 查询价格 | Yes | Active | 131.072 kbit | 8 | 16KX8 | 3.3 V | 1 MHz | EEPROM | 5MICROAMP STANDBY CURRENT AVAILABLE @ 12... more | 1 | 100 | 1000000 Write/Erase Cycles | 1 | 16000 | 16.384 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3.3 V | I2C | 2 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | CAT24C128YI-GT3 | 2260 | 2024-11-15 23:09:14 | TSSOP8, 4.4x3 | 8 | 948AL | compliant | Thailand | EAR99 | 8542.32.00.51 | 6.3 | 21 weeks | ||||||||||
对比 | MX25L25645GZ2I-08G | Macronix International Co Ltd | 查询价格 | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 120 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 25 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-XDSO-N8 | e3 | 85 °C | -40 °C | 8 | UNSPECIFIED | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | TIN | NO LEAD | 1.27 mm | DUAL | 800 µm | 8 mm | 6 mm | 4307504 | 2024-11-15 23:15:17 | compliant | Taiwan | EAR99 | 8542.32.00.51 | 5 | WSON-8 | 10 weeks | |||||||||||||||||||
对比 | MX25L25645GZNI-08G | Macronix International Co Ltd | 查询价格 | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 120 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 25 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-XDSO-N8 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | UNSPECIFIED | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NO LEAD | 1.27 mm | DUAL | 800 µm | 6 mm | 5 mm | 4307504 | 2024-11-15 23:15:17 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 6.2 | WSON-8 | 10 weeks | |||||||||||||||||||
对比 | MX25L25645GM2I-08G | Macronix International Co Ltd | 查询价格 | Yes | Active | 268.4355 Mbit | 8 | 32MX8 | 3 V | 120 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | SPI | 20 µA | 25 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NOR TYPE | HARDWARE/SOFTWARE | R-PDSO-G8 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | SOP8,.3 | RECTANGULAR | SMALL OUTLINE | YES | GULL WING | 1.27 mm | DUAL | 2.16 mm | 5.28 mm | 5.23 mm | 4307504 | 2024-11-15 23:15:17 | unknown | Taiwan | EAR99 | 8542.32.00.51 | 8 | SOP-8 | 10 weeks | |||||||||||||||||||
对比 | MD27C256-25/B | Rochester Electronics LLC | 查询价格 | No | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 30 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-J32 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | CERAMIC, METAL-SEALED COFIRED | QCCJ | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 4.2418 mm | 15.04 mm | 11.557 mm | 2178096 | 2024-10-11 23:05:15 | unknown | 3A001.A.2.C | 8542.32.00.61 | 3.75 | CERAMIC, JLCC-32 | 4 weeks | |||||||||||||||||||||||||||||
对比 | 5962-8606312QYX | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | e0 | 125 °C | -55 °C | MIL-PRF-38535 Class Q | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | NO LEAD | QUAD | 1937079 | 2024-07-10 18:47:44 | QFJ | 32 | compliant | USA | 3A001.A.2.C | 8542.32.00.61 | 4.6 | CERAMIC, LCC-32 | ||||||||||||||||||||||||||||||
对比 | QP27C256-200/QYA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | 1937079 | 2024-04-02 15:50:08 | DIP | 28 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | HERMETIC SEALED, CERAMIC, DIP-28 | |||||||||||||||||||||||||||||||||
对比 | QP27C256-200/YA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | 1937079 | 2024-11-16 00:13:19 | DIP | 28 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | HERMETIC SEALED, CERAMIC, DIP-28 | |||||||||||||||||||||||||||||||||
对比 | QP27C256L-200/YA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | 1937079 | 2024-05-23 05:57:55 | DIP | 28 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | HERMETIC SEALED, CERAMIC, DIP-28 | |||||||||||||||||||||||||||||||||
对比 | QP27C256-200/XA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | 1937079 | 2024-11-16 00:13:25 | DIP | 28 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | HERMETIC SEALED, CERAMIC, DIP-28 | |||||||||||||||||||||||||||||||||
对比 | QP27C256L-200/XA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-GDIP-T28 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 28 | CERAMIC, GLASS-SEALED | DIP | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | DUAL | 1937079 | 2024-04-02 15:48:18 | DIP | 28 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | HERMETIC SEALED, CERAMIC, DIP-28 | |||||||||||||||||||||||||||||||||
对比 | QP27C256L-250/ZA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 60 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | NO LEAD | QUAD | 1937079 | 2024-04-02 15:27:56 | QFJ | 32 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | CERAMIC, LCC-32 | |||||||||||||||||||||||||||||||||
对比 | QP27C256L-250/YC | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 60 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | NO LEAD | QUAD | 1937079 | 2024-04-02 15:50:42 | QFJ | 32 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | CERAMIC, LCC-32 | |||||||||||||||||||||||||||||||||
对比 | QP27C256-300/QXA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 60 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CQCC-N32 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | CERAMIC, METAL-SEALED COFIRED | QCCN | RECTANGULAR | CHIP CARRIER | YES | NO LEAD | QUAD | 1937079 | 2024-05-23 08:18:41 | QFJ | 32 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | CERAMIC, LCC-32 | |||||||||||||||||||||||||||||||||
对比 | QP27C256L-300/UA | Teledyne e2v | 查询价格 | Active | 262.144 kbit | 8 | 32KX8 | 5 V | 250 ns | UVPROM | 1 | 32000 | 32.768 k | ASYNCHRONOUS | PARALLEL | 25 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XQCC-N32 | Not Qualified | 125 °C | -55 °C | MIL-STD-883 Class B | 32 | UNSPECIFIED | QCCN | RECTANGULAR | CHIP CARRIER | YES | NO LEAD | QUAD | 1937079 | 2024-05-23 06:50:29 | QFJ | 32 | compliant | 3A001.A.2.C | 8542.32.00.61 | 3.75 | JLCC-32 |