Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 内存密度 | 内存宽度 | 组织 | 标称供电电压 (Vsup) | 最大时钟频率 (fCLK) | 内存集成电路类型 | 其他特性 | 备用内存宽度 | 数据保留时间-最小值 | 耐久性 | I2C控制字节 | 功能数量 | 端口数量 | 字数代码 | 字数 | 工作模式 | 输出特性 | 并行/串行 | 编程电压 | 就绪/忙碌 | 反向引出线 | 串行总线类型 | 最大待机电流 | 最大压摆率 | 最大供电电压 (Vsup) | 最小供电电压 (Vsup) | 技术 | 温度等级 | 切换位 | 最长写入周期时间 (tWC) | 写保护 | JESD-30 代码 | 认证状态 | JESD-609代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 筛选级别 | 处于峰值回流温度下的最长时间 | 端子数量 | 封装主体材料 | 封装代码 | 封装等效代码 | 封装形状 | 封装形式 | 表面贴装 | 端子面层 | 端子形式 | 端子节距 | 端子位置 | 座面最大高度 | 长度 | 宽度 | Source Content uid | mfrid | Modified On | 零件包装代码 | 包装说明 | 针数 | 制造商包装代码 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | Date Of Intro | |
对比 | CAT93C66VI-GT3 | onsemi | 查询价格 | Yes | Active | 4.096 kbit | 16 | 256X16 | 5 V | 2 MHz | EEPROM | 100 YEAR DATA RETENTION | 8 | 100 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | MICROWIRE | 10 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT93C66VI-GT3 | 2260 | 2024-11-15 23:11:16 | SOIC 8, 150 mils | 0.150 INCH, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 11 weeks 5 days | 5.9 | |||||||||||||
对比 | CAT25020VI-GT3 | onsemi | 查询价格 | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT25020VI-GT3 | 2260 | 2024-11-15 23:09:14 | SOIC 8, 150 mils | MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 21 weeks | 5.9 | ||||||||||||||
对比 | CAT25010VI-GT3 | onsemi | 查询价格 | Yes | Active | 1.024 kbit | 8 | 128X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 128 | 128 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | CAT25010VI-GT3 | 2260 | 2024-11-15 23:09:14 | SOIC 8, 150 mils | MS-012, SOIC-8 | 8 | 751BD | compliant | Philippines | EAR99 | 8542.32.00.51 | 21 weeks | 5.9 | ||||||||||||||
对比 | CAT25010YI-GT3 | onsemi | 查询价格 | Yes | Active | 1.024 kbit | 8 | 128X8 | 5 V | 20 MHz | EEPROM | 100 | 1000000 Write/Erase Cycles | 1 | 128 | 128 words | SYNCHRONOUS | SERIAL | SPI | 2 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e4 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Nickel/Palladium/Gold (Ni/Pd/Au) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | CAT25010YI-GT3 | 2260 | 2024-11-15 23:09:14 | TSSOP8, 4.4x3 | MO-153, TSSOP-8 | 8 | 948AL | compliant | Thailand | EAR99 | 8542.32.00.51 | 21 weeks | 5.9 | ||||||||||||||
对比 | 93LC46B-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46B-I/SN | 2188 | 2024-11-16 00:01:37 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 10 | |||||||||
对比 | 93LC46B/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46B/SN | 2188 | 2024-11-15 23:11:16 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks 4 days | 5.9 | |||||||||||||
对比 | 93LC46BT-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46BT-I/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 10 | ||||||||
对比 | 24LC16B/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 100 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 10 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16B/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 6.2 | |||||||||||
对比 | 24LC16B-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16B-I/SN | 2188 | 2024-11-15 23:17:36 | SOIC | 8 | compliant | Thailand | 7 weeks 1 day | 10 | |||||||||||||
对比 | 24LC16B-E/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 5 µA | 3 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16B-E/SN | 2188 | 2024-11-15 23:02:45 | SOIC | SOP, SOP8,.25 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 10 | ||||||||||
对比 | 93LC46A-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 128 | 128 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46A-I/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks | 10 | ||||||||
对比 | 93LC66B/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | 3 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC66B/SN | 2188 | 2024-11-15 23:02:45 | SOIC | SOP, SOP8,.25 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks | 10 | ||||||||||||
对比 | 93LC66B-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 2.5 V | 1 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC66B-I/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks | 10 | ||||||||
对比 | 93LC46A/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 8 | 128X8 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 128 | 128 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46A/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks | 5.9 | |||||||||||||
对比 | 24LC16B-I/SNG | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 5 V | 400 kHz | EEPROM | 1000K ERASE/WRITE CYCLES; CAN BE ORGANIZ... more | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 2000 | 2.048 k | SYNCHRONOUS | SERIAL | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | 24LC16B-I/SNG | 2188 | 2024-11-15 23:11:16 | SOIC | 0.150 INCH, ROHS COMPLIANT, PLASTIC, MS-012, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 97 weeks 1 day | 6.2 | ||||||||||||
对比 | 93LC66BT-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 4.096 kbit | 16 | 256X16 | 2.5 V | 1 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC66BT-I/SN | 2188 | 2024-11-15 23:06:55 | SOIC | SOP, SOP8,.25 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 10 | ||||||||
对比 | 24LC04B/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010XXMR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 100 µA | 3 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC04B/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 10 | |||||||||||
对比 | 24LC04B-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 4.096 kbit | 8 | 512X8 | 5 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010XXMR | 1 | 1 | 512 | 512 words | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 5 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | AEC-Q100 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC04B-I/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 5 weeks | 10 | 1991-01-01 | ||||||||||
对比 | 93LC46BT/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 93LC46BT/SN | 2188 | 2024-11-15 23:02:45 | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | Thailand | EAR99 | 8542.32.00.51 | 4 weeks | 5.9 | |||||||||||||
对比 | 24LC16BT-I/SN | Microchip Technology Inc | 查询价格 | Yes | Yes | Active | 16.384 kbit | 8 | 2KX8 | 3 V | 400 kHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1010MMMR | 1 | 1 | 2000 | 2.048 k | SYNCHRONOUS | OPEN-DRAIN | SERIAL | 3 V | I2C | 1 µA | 3 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) - annealed | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | 24LC16BT-I/SN | 2188 | 2024-11-16 00:14:07 | SOIC | 8 | compliant | Thailand | 4 weeks | 10 |