变容二极管_变容二极管型号_变容二极管参数-datasheet5电子元器件查询网

								Most Relevant										Technical							Compliance				Operating Conditions					Physical							Other
对比	制造商型号	制造商	综合价格	风险等级	是否无铅	是否Rohs认证	生命周期	标称二极管电容	最大反向电流	最大功率耗散	二极管元件材料	最小击穿电压	二极管类型	配置	表面贴装	最大重复峰值反向电压	元件数量	其他特性	二极管电容容差	最小二极管电容比	频带	最小质量因数	反向测试电压	变容二极管分类	认证状态	JESD-30 代码	JESD-609代码	JEDEC-95代码	湿度敏感等级	最高工作温度	最低工作温度	峰值回流温度（摄氏度）	处于峰值回流温度下的最长时间	端子数量	封装主体材料	封装形状	封装形式	端子面层	端子形式	端子位置	Source Content uid	mfrid	Modified On	是否符合REACH标准	ECCN代码	HTS代码	交付时间	YTEOL	零件包装代码	包装说明	针数	制造商包装代码	Country Of Origin	Date Of Intro
对比	1SV324(TPH3,F)	Toshiba America Electronic Components	查询价格			Yes	Active	46.75 pF					VARIABLE CAPACITANCE DIODE	SINGLE	YES	10 V	1			4				ABRUPT													SMALL OUTLINE				1SV324(TPH3,F)	2484	2024-07-10 19:27:08	unknown	EAR99	8541.10.00.80	53 weeks 1 day	6
对比	SMV1249-079LF	Skyworks Solutions Inc	查询价格		Yes	Yes	Active	31 pF	20 nA	250 mW	SILICON	15 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES	15 V	1			11		600	12 V	HYPERABRUPT	Not Qualified	R-PDSO-F2	e3		1	125 °C	-55 °C	260		2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	TIN	FLAT	DUAL		2408	2024-07-10 18:58:09	compliant	EAR99	8541.10.00.60		7.32	SC-79	SC-79, 2 PIN	2
对比	1SV305,L3F(T	Toshiba America Electronic Components	查询价格				Active	18.3 pF			SILICON		VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		5.46 %	2.8	VERY HIGH FREQUENCY			ABRUPT		R-PDSO-F2				125 °C		NOT SPECIFIED	NOT SPECIFIED	2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		FLAT	DUAL	1SV305,L3F(T	2484	2024-07-10 20:49:05	unknown	EAR99	8541.10.00.80		7.12		R-PDSO-F2
对比	1SV323,H3F(T	Toshiba America Electronic Components	查询价格				Active						VARIABLE CAPACITANCE DIODE																			NOT SPECIFIED	NOT SPECIFIED								1SV323,H3F(T	2484	2023-12-01 18:00:47	unknown	EAR99
对比	1SV279,H3F(T	Toshiba America Electronic Components	查询价格				Active	15 pF	3 nA		SILICON	15 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES	15 V	1		6.67 %	2	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		15 V	ABRUPT		R-PDSO-F2				125 °C		NOT SPECIFIED	NOT SPECIFIED	2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE		FLAT	DUAL	1SV279,H3F(T	2484	2024-07-10 19:28:15	unknown	EAR99	8541.10.00.80		7.12
对比	1SV281(TPH3,F)	Toshiba America Electronic Components	查询价格			Yes	Active	16 pF					VARIABLE CAPACITANCE DIODE	SINGLE	YES	10 V	1			1.8				ABRUPT													SMALL OUTLINE				1SV281(TPH3,F)	2484	2024-07-10 19:57:52	unknown	EAR99	8541.10.00.80		6
对比	BBY6502VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active	29.5 pF			SILICON	15 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		4.41 %	10				HYPERABRUPT		R-PDSO-F2	e3		1	150 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	FLAT	DUAL	BBY6502VH6327XTSA1	2065	2024-11-15 23:05:33	compliant	EAR99	8541.10.00.80	4 weeks	7.32		R-PDSO-F2
对比	BBY5302VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active	5.3 pF			SILICON	6 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		9.43 %	1.8	ULTRA HIGH FREQUENCY			HYPERABRUPT		R-PDSO-F2	e3		1	125 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	FLAT	DUAL	BBY5302VH6327XTSA1	2065	2024-11-15 23:05:33	compliant	EAR99	8541.10.00.80	4 weeks	7.32		R-PDSO-F2
对比	BBY5702VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active						VARIABLE CAPACITANCE DIODE														e3		1									Tin (Sn)			BBY5702VH6327XTSA1	2065	2024-11-15 23:17:36	compliant	EAR99		16 weeks 3 days
对比	BB914E6327HTSA1	Infineon Technologies AG	查询价格		Yes	Yes	Active	43.75 pF			SILICON	18 V	VARIABLE CAPACITANCE DIODE	COMMON CATHODE, 2 ELEMENTS	YES		2	1.5% MATCHED SETS AVAILABLE	2.86 %	2.28				ABRUPT	Not Qualified	R-PDSO-G3	e3		1					3	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BB914E6327HTSA1	2065	2024-11-15 23:05:33	compliant	EAR99	8541.10.00.80	4 weeks	7.12	SOT-23	R-PDSO-G3	3
对比	BB844E6327HTSA1	Infineon Technologies AG	查询价格			Yes	Active	43.75 pF			SILICON	18 V	VARIABLE CAPACITANCE DIODE	COMMON CATHODE, 2 ELEMENTS	YES		2	CAPACITANCE MATCHED TO 1.5%	2.86 %	3.2	VERY HIGH FREQUENCY			ABRUPT		R-PDSO-G3	e3		1	150 °C	-55 °C			3	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BB844E6327HTSA1	2065	2024-11-15 23:19:00	compliant	EAR99	8541.10.00.80	16 weeks 3 days	7.12		ROHS COMPLIANT, SOT23, 3 PIN
对比	BBY6602VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active						VARIABLE CAPACITANCE DIODE														e3		1									Tin (Sn)			BBY6602VH6327XTSA1	2065	2024-11-15 23:05:33	compliant	EAR99		4 weeks
对比	BBY5502VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active	18.6 pF			SILICON	16 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		5.66 %	2				HYPERABRUPT		R-PDSO-F2	e3		1	150 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Matte Tin (Sn)	FLAT	DUAL	BBY5502VH6327XTSA1	2065	2024-11-15 23:05:33	compliant	EAR99	8541.10.00.80	4 weeks	7.32		SC-79, 2 PIN
对比	BBY5802VH6327XTSA1	Infineon Technologies AG	查询价格			Yes	Active	18.3 pF			SILICON	10 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		4.89 %	1.15				HYPERABRUPT		R-PDSO-F2	e3		1	150 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	FLAT	DUAL	BBY5802VH6327XTSA1	2065	2024-11-08 15:46:21	compliant	EAR99	8541.10.00.80	4 weeks	7.32		R-PDSO-F2
对比	BBY5303WE6327HTSA1	Infineon Technologies AG	查询价格			Yes	Active	5.3 pF			SILICON	6 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES		1		9.43 %	1.8	ULTRA HIGH FREQUENCY			HYPERABRUPT		R-PDSO-G2	e3		1	125 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BBY5303WE6327HTSA1	2065	2024-11-08 17:19:22	compliant	EAR99	8541.10.00.80	4 weeks	7.32		R-PDSO-G2
对比	1SV280(TPH3,F)	Toshiba America Electronic Components	查询价格			Yes	Active	4.25 pF					VARIABLE CAPACITANCE DIODE	SINGLE	YES	15 V	1			2				ABRUPT													SMALL OUTLINE				1SV280(TPH3,F)	2484	2024-07-10 20:35:17	unknown	EAR99	8541.10.00.80	52 weeks	6
对比	BB535E7904HTSA1	Infineon Technologies AG	查询价格			Yes	Not Recommended	18.7 pF			SILICON		VARIABLE CAPACITANCE DIODE	SINGLE	YES		1	LOW INDUCTANCE	6.67 %	8.2	ULTRA HIGH FREQUENCY			ABRUPT		R-PDSO-G2	e3		1	150 °C	-55 °C			2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BB535E7904HTSA1	2065	2024-11-08 17:49:48	compliant	EAR99	8541.10.00.80	4 weeks	3		R-PDSO-G2
对比	BB135,115	NXP Semiconductors	查询价格			Yes	Not Recommended	19.25 pF	10 nA		SILICON		VARIABLE CAPACITANCE DIODE	SINGLE	YES	30 V	1			8.9	ULTRA HIGH FREQUENCY		30 V	ABRUPT	Not Qualified	R-PDSO-G2	e3		1	125 °C	-55 °C	260	30	2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BB135,115	2245	2024-11-08 16:14:49	compliant	EAR99	8541.10.00	4 weeks	3	SOD	PLASTIC, SMD, 2 PIN	2	SOD323	Mainland China
对比	BB640E6327HTSA1	Infineon Technologies AG	查询价格		Yes	Yes	Not Recommended	69 pF			SILICON		VARIABLE CAPACITANCE DIODE	SINGLE	YES		1			19.5				ABRUPT	Not Qualified	R-PDSO-G2	e3		1					2	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BB640E6327HTSA1	2065	2024-11-08 15:58:26	compliant	EAR99	8541.10.00.80		3	SOD	R-PDSO-G2	2	SOD-323		1997-02-01
对比	BBY40,235	NXP Semiconductors	查询价格			Yes	Not Recommended	29 pF			SILICON	30 V	VARIABLE CAPACITANCE DIODE	SINGLE	YES	30 V	1		10.34 %	5	VERY HIGH FREQUENCY			ABRUPT		R-PDSO-G3	e3	TO-236AB	1	125 °C	-55 °C	260	30	3	PLASTIC/EPOXY	RECTANGULAR	SMALL OUTLINE	Tin (Sn)	GULL WING	DUAL	BBY40,235	2245	2024-11-08 17:21:53	compliant	EAR99	8541.10.00	13 weeks	3	TO-236		3	SOT23	Mainland China

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