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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 最大二极管电容 | 标称二极管电容 | 最大功率耗散 | 最大二极管正向电阻 | 二极管元件材料 | 最小击穿电压 | 二极管类型 | 配置 | 表面贴装 | 元件数量 | 技术 | 其他特性 | 应用 | 二极管电阻测试电流 | 二极管电阻测试频率 | 频带 | 少数载流子标称寿命 | 反向测试电压 | 认证状态 | JESD-30 代码 | JESD-609代码 | 参考标准 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 端子数量 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | Source Content uid | mfrid | Modified On | 包装说明 | 针数 | 是否符合REACH标准 | Country Of Origin | ECCN代码 | HTS代码 | 交付时间 | YTEOL | Date Of Intro | 零件包装代码 | 制造商包装代码 | |
对比 | BAR6305E6327HTSA1 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6305E6327HTSA1 | 2065 | 2024-11-08 15:14:03 | R-PDSO-G3 | 3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 4 weeks | 7.4 | ||||||||||||||
对比 | RN142SMT2R | ROHM Semiconductor | 查询价格 | Yes | Active | 0.45 pF | 2 Ω | SILICON | 60 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | SWITCHING | 10 mA | 100 MHz | VERY HIGH FREQUENCY | 1 V | R-PDSO-F2 | e3 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2363 | 2024-11-15 23:17:07 | SC-79, SOD-523, 2 PIN | compliant | EAR99 | 8541.10.00.80 | 17 weeks | 7.4 | 2018-08-09 | ||||||||||||||||||
对比 | RN141CMT2R | ROHM Semiconductor | 查询价格 | Yes | Active | 0.8 pF | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | HIGH RELIABILITY | SWITCHING | 3 mA | 100 MHz | VERY HIGH FREQUENCY | 1 V | R-PDSO-F2 | e3 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | 2363 | 2024-11-16 00:09:43 | compliant | EAR99 | 8541.10.00.80 | 7.4 | 2018-08-09 | ||||||||||||||||||||
对比 | BA885E6327 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 0.4 pF | 0.26 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 1.5 mA | 100 MHz | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | BA885E6327 | 2065 | 2024-06-03 17:51:35 | SOT-23, 3 PIN | 3 | compliant | EAR99 | 8541.10.00.80 | 7.4 | SOT-23 | |||||||||||||
对比 | BAR81WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 1 pF | 100 mW | 1 Ω | SILICON | 30 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | 80 ns | R-PDSO-G4 | e3 | 1 | 150 °C | CATHODE | 4 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR81WH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | R-PDSO-G4 | compliant | EAR99 | 8541.10.00.80 | 8 weeks | 7.4 | |||||||||||||||||||
对比 | BAR6406WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON ANODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6406WH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | compliant | EAR99 | 4 weeks | ||||||||||||||||||||||||||||||||||
对比 | BAR6303WE6327HTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G2 | e3 | 1 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6303WE6327HTSA1 | 2065 | 2024-11-15 23:15:11 | R-PDSO-G2 | compliant | EAR99 | 8541.10.00.80 | 19 weeks 1 day | 7.4 | |||||||||||||||||||
对比 | BAR6305WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6305WH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | R-PDSO-G3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 4 weeks | 7.4 | ||||||||||||||||||
对比 | 1SV264-TL-E | onsemi | 查询价格 | Yes | Active | 0.4 pF | 4.5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | e6 | 1 | 260 | 30 | TIN BISMUTH | 1SV264-TL-E | 2260 | 2024-11-15 23:05:55 | 3 | compliant | EAR99 | 13 weeks | SC-70 / MCP3 | 419AJ | ||||||||||||||||||||||||||||||
对比 | BAR6405WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | COMMON CATHODE, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6405WH6327XTSA1 | 2065 | 2024-11-08 17:25:04 | compliant | EAR99 | |||||||||||||||||||||||||||||||||||
对比 | BAR6404WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.35 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 2 | POSITIVE-INTRINSIC-NEGATIVE | 1.55 µs | e3 | 1 | Tin (Sn) | BAR6404WH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | compliant | EAR99 | 4 weeks | ||||||||||||||||||||||||||||||||||
对比 | BAR6302VH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-F2 | e3 | AEC-Q101 | 1 | 125 °C | -55 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BAR6302VH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | R-PDSO-F2 | 2 | compliant | EAR99 | 8541.10.00.80 | 4 weeks | 7.4 | SC-79 | ||||||||||||||
对比 | BAR6304WH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.3 pF | 250 mW | 2 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | SWITCHING | S BAND | 75 ns | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | BAR6304WH6327XTSA1 | 2065 | 2024-11-08 16:59:29 | R-PDSO-G3 | compliant | EAR99 | 8541.10.00.80 | 7.4 | ||||||||||||||||||||
对比 | NSDP301MX3T5G | onsemi | 查询价格 | Yes | Active | 0.33 pF | SILICON | 80 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | HIGH FREQUENCY | R-PBCC-N2 | e4 | 1 | 150 °C | -55 °C | 260 | 30 | 2 | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | NICKEL PALLADIUM GOLD | NO LEAD | BOTTOM | NSDP301MX3T5G | 2260 | 2024-11-15 23:16:44 | X3DFN-2 | compliant | 10 weeks | 6.97 | X3DFN-2 | 152AF | |||||||||||||||||||
对比 | NSVP264SDSF3T1G | onsemi | 查询价格 | Yes | Active | 0.4 pF | 0.23 pF | 100 mW | 4.5 Ω | SILICON | 50 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 10 mA | 100 MHz | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 50 V | R-PDSO-G3 | e6 | AEC-Q101 | 1 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Bismuth (Sn/Bi) | GULL WING | DUAL | NSVP264SDSF3T1G | 2260 | 2024-11-15 23:17:36 | SC-70, 3 PIN | compliant | Mainland China | EAR99 | 8541.10.00.80 | 2 days | 7.4 | SC-70 / MCP3 | 419AJ | ||||||||||
对比 | MA4P4002F-1091T | MACOM | 查询价格 | Yes | Yes | Active | 2.2 pF | 2.2 pF | 7.5 W | 500 mΩ | SILICON | 200 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | LOW DISTORTION | ATTENUATOR; SWITCHING | 100 mA | 100 MHz | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | 6 µs | 100 V | Not Qualified | O-CELF-R2 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | CERAMIC, METAL-SEALED COFIRED | ROUND | LONG FORM | WRAP AROUND | END | 2149 | 2024-06-03 17:51:12 | ROHS COMPLIANT, CERAMIC, CASE 1072, 2 PIN | 2 | compliant | EAR99 | 8541.10.00.80 | 5.45 | CASE 1072 | ||||||||||||
对比 | BAR6502VH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | PIN DIODE | e3 | 1 | Matte Tin (Sn) | BAR6502VH6327XTSA1 | 2065 | 2024-11-15 23:05:33 | compliant | EAR99 | 4 weeks | ||||||||||||||||||||||||||||||||||||||||||
对比 | BAR6702VH6327XTSA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.9 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | L BAND | 700 ns | R-PDSO-F2 | e3 | 1 | 150 °C | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | BAR6702VH6327XTSA1 | 2065 | 2024-11-15 23:15:04 | R-PDSO-F2 | compliant | EAR99 | 8541.10.00.80 | 17 weeks 1 day | 7.4 | |||||||||||||||||||
对比 | BAR66E6327HTSA1 | Infineon Technologies AG | 查询价格 | Yes | Yes | Active | 0.6 pF | 250 mW | 1.8 Ω | SILICON | 150 V | PIN DIODE | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | YES | 2 | POSITIVE-INTRINSIC-NEGATIVE | 700 ns | Not Qualified | R-PDSO-G3 | 1 | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | BAR66E6327HTSA1 | 2065 | 2024-11-15 23:05:40 | R-PDSO-G3 | compliant | Mainland China | EAR99 | 8541.10.00.80 | 53 weeks 1 day | 7.4 | ||||||||||||||||||||
对比 | BAR6402ELE6327XTMA1 | Infineon Technologies AG | 查询价格 | Yes | Active | 0.35 pF | 0.13 pF | 1.35 Ω | SILICON | 150 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | 1 mA | 100 MHz | 1.55 µs | e4 | 1 | 125 °C | Gold (Au) | BAR6402ELE6327XTMA1 | 2065 | 2024-11-08 17:25:04 | compliant | EAR99 | 13 weeks |