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对比 | 制造商型号 | 制造商 | 综合价格 | 风险等级 | 是否无铅 | 是否Rohs认证 | 生命周期 | 最大限制电压 | 标称调节电流 (Ireg) | 最大功率耗散 | 二极管元件材料 | 二极管类型 | 配置 | 表面贴装 | 最大重复峰值反向电压 | 元件数量 | 技术 | 其他特性 | 最小动态阻抗 | 膝阻抗最大值 | 认证状态 | JESD-30 代码 | JESD-609代码 | 参考标准 | JEDEC-95代码 | 湿度敏感等级 | 最高工作温度 | 最低工作温度 | 峰值回流温度(摄氏度) | 处于峰值回流温度下的最长时间 | 外壳连接 | 端子数量 | 封装主体材料 | 封装形状 | 封装形式 | 端子面层 | 端子形式 | 端子位置 | mfrid | Modified On | 包装说明 | 针数 | 是否符合REACH标准 | ECCN代码 | HTS代码 | YTEOL | Country Of Origin | Date Of Intro | Source Content uid | 零件包装代码 | |
对比 | CMJ4500 | Central Semiconductor Corp | 查询价格 | No | No | Active | 3.7 V | 4.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | HIGH RELIABILITY | 200 kΩ | 10 kΩ | Not Qualified | R-PDSO-F2 | e6 | 1 | 150 °C | -65 °C | 260 | 10 | 2 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Bismuth (Sn/Bi) | FLAT | DUAL | 1838 | 2024-07-10 20:40:20 | SOD-123FL, 2 PIN | 2 | not_compliant | EAR99 | 8541.10.00.70 | 7.8 | |||||||||
对比 | CL20M45 | Diotec Semiconductor AG | 查询价格 | Yes | Active | 3 V | 20 mA | 1 W | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 90 V | 1 | FIELD EFFECT | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Matte Tin (Sn) - annealed | 2397844 | 2024-07-10 18:07:33 | compliant | EAR99 | 7.4 | Mainland China | |||||||||||||||||||||||||
对比 | SST511-LF | Calogic Inc | 查询价格 | Yes | Active | 4.2 V | 4.7 mA | 360 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 50 V | 1 | FIELD EFFECT | R-PDSO-G3 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | 1825 | 2024-07-10 18:59:34 | PLASTIC PACKAGE-3 | compliant | EAR99 | 8541.10.00.70 | 6.8 | USA | |||||||||||||||||
对比 | CL40M45 | Diotec Semiconductor AG | 查询价格 | Yes | Active | 3 V | 40 mA | 1 W | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 90 V | 1 | FIELD EFFECT | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Matte Tin (Sn) - annealed | 2397844 | 2024-07-10 21:15:57 | compliant | EAR99 | 7.4 | Mainland China | |||||||||||||||||||||||||
对比 | CL05M6F | Diotec Semiconductor AG | 查询价格 | Yes | Active | CURRENT REGULATOR DIODE | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | Matte Tin (Sn) - annealed | 2397844 | 2024-11-08 17:03:50 | compliant | EAR99 | 2018-08-31 | |||||||||||||||||||||||||||||||||||
对比 | 1N5294 | VPT Components | 查询价格 | Active | 1.2 V | 750 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | 283575970 | 2024-07-10 20:09:05 | GLASS PACKAGE-2 | compliant | 7 | USA | ||||||||||||||||
对比 | 1N5294 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1.2 V | 750 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 07:10:14 | unknown | EAR99 | 7 | 1N5294 | ||||||||||||||||||||
对比 | 1N5309 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 2.25 V | 3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-04-02 18:19:29 | unknown | EAR99 | 7 | 1N5309 | ||||||||||||||||||||
对比 | 1N5285 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1 V | 270 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 06:03:09 | unknown | EAR99 | 7 | 1N5285 | ||||||||||||||||||||
对比 | 1N5303 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1.65 V | 1.6 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 05:07:40 | unknown | EAR99 | 7 | 1N5303 | ||||||||||||||||||||
对比 | 1N5296 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1.29 V | 910 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-04-02 18:16:33 | unknown | EAR99 | 7 | 1N5296 | ||||||||||||||||||||
对比 | 1N5301 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1.55 V | 1.4 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-04-02 18:22:43 | unknown | EAR99 | 7 | 1N5301 | ||||||||||||||||||||
对比 | 1N5293 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1.15 V | 680 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 08:39:56 | unknown | EAR99 | 7 | 1N5293 | ||||||||||||||||||||
对比 | 1N5283 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 1 V | 220 µA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 07:28:27 | unknown | EAR99 | 7 | 1N5283 | ||||||||||||||||||||
对比 | 1N5307 | New Jersey Semiconductor Products Inc | 查询价格 | Active | 2 V | 2.4 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | O-LALF-W2 | DO-35 | 200 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 154773173 | 2024-05-23 08:16:57 | unknown | EAR99 | 7 | 1N5307 | ||||||||||||||||||||
对比 | 1N5296 | VPT Components | 查询价格 | Active | 1.29 V | 910 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | 283575970 | 2024-07-10 20:28:39 | GLASS PACKAGE-2 | compliant | 7 | USA | ||||||||||||||||
对比 | 1N5309 | Advanced Semiconductor Inc | 查询价格 | Active | 2.25 V | 3 mA | 600 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | 300 kΩ | Not Qualified | O-LALF-W2 | DO-7 | 200 °C | -55 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | 4307568 | 2024-01-10 15:03:21 | HERMETIC SEALED, DO-7, 2 PIN | 2 | unknown | EAR99 | 8541.10.00.70 | 2 | USA | DO-7 | ||||||||||||||
对比 | 1N5309 | VPT Components | 查询价格 | Active | 2.25 V | 3 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | 283575970 | 2024-07-10 20:56:29 | GLASS PACKAGE-2 | compliant | 7 | USA | ||||||||||||||||
对比 | 1N5293 | VPT Components | 查询价格 | Active | 1.15 V | 680 µA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | 283575970 | 2024-07-10 20:26:26 | GLASS PACKAGE-2 | compliant | 7 | USA | ||||||||||||||||
对比 | 1N5303 | VPT Components | 查询价格 | Active | 1.65 V | 1.6 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | NO | 100 V | 1 | FIELD EFFECT | Not Qualified | O-LALF-W2 | e0 | MIL-19500/463 | DO-7 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | 283575970 | 2024-07-10 20:12:10 | GLASS PACKAGE-2 | compliant | 7 | USA |