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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| BDX33 | Power Innovations International, Inc. | Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | - | |||||
| BDX33D | Power Innovations International, Inc. | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | - | |||||
| AD | CLF1G0035-100 | Ampleon | 射频/微波组件,CLF1G0035-100 - 100W Broadband RF power GaN HEMT | |||||
| BDX33A | Power Innovations International, Inc. | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | - | |||||
| BDX33B | Power Innovations International, Inc. | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | - | |||||
| BDX33C | Power Innovations International, Inc. | Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | - | |||||
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