对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
AF4410NS | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | - | |||||
AF4410NSL | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | - | |||||
AD | CLF1G0035-100 | Ampleon | 射频/微波组件,CLF1G0035-100 - 100W Broadband RF power GaN HEMT | |||||
AF4410NSA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | - | |||||
AF4410NSLA | Integrated Circuit Technology Corp | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | - |