对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
C-IXGD25N120 | IXYS Corporation | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel | - | |||||
C-IXGD25N120A | IXYS Corporation | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel | - | |||||
AD | CLF1G0060-10 | Rochester Electronics | 射频/微波组件,CLF1G0060-10 - 10W Broadband RF power GaN HEMT |