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手机随时查器件
| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| 1.5KE11 | Galaxy Microelectronics | Surface Mount TVS Diode; Direction: Single; PPK Max (W): 1500W; Condition: 10×1000us; VRWM Max (V): 8.92V; VBR Min (V): 9.9V; VBR Max (V): 12.1V; IR Max (uA): 5uA; VC Max (V): 16.2V; Package: DO-27S | - | |||||
| 1.5KE110 | Galaxy Microelectronics | Surface Mount TVS Diode; Direction: Single; PPK Max (W): 1500W; Condition: 10×1000us; VRWM Max (V): 89.2V; VBR Min (V): 99V; VBR Max (V): 121V; IR Max (uA): 5uA; VC Max (V): 158V; Package: DO-27S | - | |||||
| AD | BAT2402LSE6327XTSA1 | Infineon Technologies | 射频混频器-二极管检波器,BAT24 - RF Mixer and Detector Schottky Diode | |||||
| 1.5KE110CA | Galaxy Microelectronics | Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE, | - | |||||
| 1.5KE11A | Galaxy Microelectronics | Surface Mount TVS Diode; Direction: Single; PPK Max (W): 1500W; Condition: 10×1000us; VRWM Max (V): 9.4V; VBR Min (V): 10.5V; VBR Max (V): 11.6V; IR Max (uA): 5uA; VC Max (V): 15.6V; Package: DO-27S | - | |||||
| 1.5KE110A | Galaxy Microelectronics | Surface Mount TVS Diode; Direction: Single; PPK Max (W): 1500W; Condition: 10×1000us; VRWM Max (V): 94V; VBR Min (V): 106V; VBR Max (V): 116V; IR Max (uA): 5uA; VC Max (V): 152V; Package: DO-27S | - | |||||
| 1.5KE11C | Galaxy Microelectronics | Trans Voltage Suppressor Diode, 1500W, 8.92V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE, | - | |||||
| 1.5KE11CA | Galaxy Microelectronics | Trans Voltage Suppressor Diode, 1500W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE, | - | |||||
| 1.5KE110C | Galaxy Microelectronics | Trans Voltage Suppressor Diode, 1500W, 89.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-201AE, | - | |||||
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