对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
NE25139T1U72 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
AD | FD600R17KE3B2NOSA1 | Infineon Technologies | IGBT模块,FD600R17 - IGBT Module |