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| 对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
|---|---|---|---|---|---|---|---|---|
| NE25139-T2 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| NE25139T2U74 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| AD | PMCM6501VPEZ | Nexperia | MOSFET/FET,Nexperia PMCM6501VPE - Small Signal Field-Effect Transistor | |||||
| NE25139T2U72 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| NE25139T2U71 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
| NE25139T2U73 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
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