对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
NE25139-T1 | California Eastern Laboratories (CEL) | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET | - | |||||
NE25139T1 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
AD | F3L200R07PE4BOSA1 | Infineon Technologies | IGBT模块,F3L200R07 - IGBT Module | |||||
NE25139T1U72 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
NE25139T1U74 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
NE25139T1U71 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - | |||||
NE25139T1U73 | California Eastern Laboratories (CEL) | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | - |