对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
NE080491 | California Eastern Laboratories (CEL) | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | - | |||||
NE080491-12 | California Eastern Laboratories (CEL) | RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN | - | |||||
AD | BSM100GB120DN2HOSA1 | Infineon Technologies | IGBT模块,MEDIUM POWER 62MM |