IRF

Power Field-Effect Transistor, 9.7A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Power Field-Effect Transistor, 1.4A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Power Field-Effect Transistor, 3A I(D), 80V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

General Fixed Inductor, 1 ELEMENT, 0.82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED, ROHS COMPLIANT

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

General Fixed Inductor, 1 ELEMENT, 2700 uH, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFETs;80A;55V;D²PAK/TO-263

MOSFETs;-38A;-100V;TO-263

MOSFETs;3.1A;1000V;TO-220

MOSFETs;31A;55V;TO-220F

MOSFETs;32A;250V;TO-220F

MOSFETs;67A;40V;TO-220F

MOSFETs;13A;55V;TO-220F

MOSFETs;230A;75V;TO-263

MOSFETs;17A;55V;D²PAK/TO-263

MOSFETs;47A;20V;D²PAK/TO-263