对比 | 型号 | 厂商 | 描述 | 价格 | ECAD | 数据手册 | 替代料 | |
---|---|---|---|---|---|---|---|---|
BSS138L | Fairchild Semiconductor Corporation | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, SOT-23, 3 PIN | - | |||||
BSS138L | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, 3000-REEL | ¥1.8817 | |||||
AD | IRF6785MTRPBF | Infineon Technologies | 功率MOSFET,IRF6785 - 12V-300V N-Channel Power MOSFET | |||||
BSS138LT7G | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, 3500-REEL | - | |||||
BSS138L-AE3-R | Unisonic Technologies Co Ltd | Transistor | - | |||||
BSS138LT1 | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | - | |||||
BSS138LT3 | LRC Leshan Radio Co Ltd | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | - | |||||
BSS138LT3G | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | ¥2.2435 | |||||
BSS138LT1 | Motorola Semiconductor Products | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | - | |||||
BSS138LT1 | LRC Leshan Radio Co Ltd | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | - | |||||
BSS138LT3 | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 10000-REEL | - | |||||
BSS138LT1G | onsemi | Single N-Channel Logic Level Power MOSFET 50V, 200mA, 3.5Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL | ¥1.5198 | |||||
BSS138LT1 | Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,50V V(BR)DSS,200MA I(D),TO-236AB | - | |||||
BSS138LT1 | Motorola Mobility LLC | 200mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN | - | |||||
BSS138L-AE2-R | Unisonic Technologies Co Ltd | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 | - | |||||
BSS138LT3 | Motorola Semiconductor Products | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, CASE 318-08, 3 PIN | - | |||||
BSS138LT3 | Motorola Mobility LLC | 200mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, 3 PIN | - | |||||
BSS138L-AL3-R | Unisonic Technologies Co Ltd | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | - | |||||
BSS138-L99Z | Texas Instruments | 220mA, 50V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | - | |||||
S-LBSS138LT3G | LRC Leshan Radio Co Ltd | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MINIATURE PACKAGE-3 | - | |||||
LBSS138LT1G | LRC Leshan Radio Co Ltd | VDSS (V):50, VGS(V):20, ID (A):0.2, VGSth Min (V):0.5, VGSth Max (V):1.5 | - |